BZD27B200P-M3-18

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The BZD27B200P-M3-18 is a single Zener diode also known as a voltage regulator. It is widely used in a wide variety of applications, most notably in the protection of sensitive electronic devices from the potential damage caused by transient events such as electrostatic discharge (ESD) and power surges. The diode is also commonly found in the power supplies and reverse bias circuits of digital and analog equipment. The Zener diode is designed to allow for the regulated flow of current when the applied voltage is greater than the breakdown voltage (Vz) of the diode.

The BZD27B200P-M3-18 is based on the PN junction diode which works by utilizing a barrier layer composed of a heavily doped P-type semiconductor material and a spacer layer composed of a lightly doped N-type semiconductor material. The two layers are then separated by a zero-energy state, or constant barrier, known as the depletion region. When a forward bias voltage is applied across the diode, the majority carriers of each type flow into the junction and produce a net forward current. When the applied voltage exceeds the breakdown voltage, the reverse current begins to flow with the majority carriers of each type flowing in opposite directions.

The characteristics of the BZD27B200P-M3-18 make it well suited for use in a variety of applications including the protection of sensitive electronic components against voltage spikes, static voltages, and power surges. The low leakage current of the diode, which is typically in the range of 5-20µA, makes it ideal for use in low power applications. In addition, the junction temperature range of the diode is from -25°C to 150°C which makes it suitable for operation in extreme temperatures. The diode also offers low capacitance and low noise operation.

The BZD27B200P-M3-18 is generally used as part of a voltage regulation circuit. When such a circuit is used, the diode functions as a limiter, preventing excessive currents from flowing from the power source or from passing back through the power source into the connected equipment. The diode also functions as a heat sink, preventing the power source from being damaged by the excessive heat which is created when the current passes through the diode. The heat is then dissipated as radiation and conducted away from the diode as heat.

In summary, the BZD27B200P-M3-18 diode is a versatile Zener diode designed for use in a wide variety of circuits. It works by utilizing a barrier layer composed of a heavily doped P-type semiconductor material and a spacer layer composed of a lightly doped N-type semiconductor material. When a forward bias voltage is applied across the diode, the majority carriers of each type flow into the junction and produce a net forward current. When the forward bias exceeds the breakdown voltage, the reverse current begins to flow with the majority carriers of each type flowing in opposite directions. The diode is primarily used in voltage regulation circuits and is suitable for use in low power applications as well as extreme temperature environments.

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