BZD27C11P-M-08 Allicdata Electronics
Allicdata Part #:

BZD27C11P-M-08-ND

Manufacturer Part#:

BZD27C11P-M-08

Price: $ 0.07
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 800MW SMF DO219-M
More Detail: Zener Diode 11V 800mW Surface Mount DO-219AB (SMF...
DataSheet: BZD27C11P-M-08 datasheetBZD27C11P-M-08 Datasheet/PDF
Quantity: 1000
30000 +: $ 0.06174
Stock 1000Can Ship Immediately
$ 0.07
Specifications
Series: Automotive, AEC-Q101, BZD27C
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 11V
Tolerance: --
Power - Max: 800mW
Impedance (Max) (Zzt): 7 Ohms
Current - Reverse Leakage @ Vr: 4µA @ 8.2V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: DO-219AB (SMF)
Description

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The BZD27C11P-M-08 is a single Zener diode, a two-lead semiconductor device which performs a variety of voltage regulation functions. Zener diodes have a wide range of uses, from model railway applications where they protect lines from over-voltage to voltage regulator circuits for precision voltage sources. This article will discuss the application field and working principle of the BZD27C11P-M-08.

The BZD27C11P-M-08 is well suited to a wide range of applications, including voltage regulators and clamping circuits. Its design ensures that it stays in a convenient ON/OFF state and eliminates the possibility of undesired ringing or oscillations. It is also well suited to applications that require reverse voltage protection, such as automotive circuits and DC-DC converters. As its breakdown voltage is very close to the expected steady-state voltage, it can protect sensitive circuits from over-voltage without creating spikes or oscillations. Additionally, its low operating temperature range and low power consumption make it suitable for portable electronics.

The working principle of the BZD27C11P-M-08 is based on the typical behavior of diodes when a current is applied to them. When a Zener diode is forward-biased, a voltage is applied across the diode junction. This causes the majority carriers to cross the junction, resulting in a current flow. As the voltage across the junction increases, so does the current, until the Zener voltage is reached. At this point, the diode starts to exhibit the Zener breakdown behavior - the current suddenly increases significantly due to a change in the characteristics of the junction, resulting in a much higher current flow.

When a Zener diode is put into reverse-bias, the applied voltage takes the diode out of the Zener region, and the current starts to drop again. This allows it to be used as a voltage-clamping device, which will limit the voltage traveling in the circuit to a given value. Additionally, the diode can be used to prevent inductive kickback in switching circuits and to protect sensitive components from excess voltages. As this Zener diode has a relatively low power rating and good temperature range, it is also ideal for use in circuits where low power consumption and good stability are essential.

In conclusion, the BZD27C11P-M-08 is a single Zener diode that is ideal for a variety of application where low power consumption and good stability are essential. Its design ensures that it stays in an ON/OFF state, while its wide operating temperature range and low power consumption make it suitable for portable electronics. Additionally, its reverse-bias behavior makes it well suited to voltage clamping, inductive kickback preventions and over-voltage protection. All these characteristics make the BZD27C11P-M-08 an ideal choice for a range of applications.

The specific data is subject to PDF, and the above content is for reference

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