BZD27C36P-E3-08

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The BZD27C36P-E3-08, a single Zener diode from the BZD27 product series, is a Silicon Junction Diode specially designed for specific applications. Its use as an active component, in low-power applications, for producing a known and fixed voltage, makes it an attractive choice. It is particularly suitable for circuit protection, voltage clamping, and many other applications.

BZD27C36P-E3-08: Features and Specifications

The most important features of the BZD27C36P-E3-08 are its:

• Minimum Zener Voltage of 3.3V
• Maximum Zener Voltage of 8V
• Climatic Range of -40°C to 125°C
• Power Dissipation of 175mW
• High Breakdown Voltage of 22V

In addition, its other specifications include the following:

• Reverse Breakdown Voltagem1,2 of 4V to 10V
• Forward Voltage Dropm1 of less than 15V
• Forward Current at 35˚C of 300mA
• Non-repetitive energy dissipationm2 of 900mW at 25˚C
• Derate linearly above 25˚C

BZD27C36P-E3-08: Applications

The most suitable applications for the BZD27C36P-E3-08 are:

• Protecting circuits from overvoltage
• Voltage clamping
• Simplifying voltage regulation
• Creating a stable DC reference voltage
• Maximizing pulse throughput
• Surge protection
• Noise filtering

BZD27C36P-E3-08: Working Principle

The BZD27C36P-E3-08 works on the principle of a Zener Breakdown. When the reverse polarity of a diode is applied, a large reverse current flows and the voltage at the PN junction drops drastically. This is known as a Zener Breakdown. The voltage is maintained at the rated Zener voltage by limiting the current.

In addition to its Zener Breakdown function, the BZD27C36P-E3-08 can also be used as a rectifier diode. As a rectifier, it converts alternating current to direct current by allowing current to pass during the positive half-cycle of an AC waveform. During the negative half-cycle it prevents current from flowing.

Thus, the BZD27C36P-E3-08 can be used in a variety of applications to both protect and regulate circuits.

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