| Allicdata Part #: | BZG04-82-HM3-08-ND |
| Manufacturer Part#: |
BZG04-82-HM3-08 |
| Price: | $ 0.13 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Semiconductor Diodes Division |
| Short Description: | DIODE ZENER 82V 50A DO214AC |
| More Detail: | Zener Diode 100V 1.25W Surface Mount DO-214AC (SM... |
| DataSheet: | BZG04-82-HM3-08 Datasheet/PDF |
| Quantity: | 1000 |
| 6000 +: | $ 0.12086 |
Specifications
| Series: | Automotive, AEC-Q101, BZG04-M |
| Part Status: | Active |
| Voltage - Zener (Nom) (Vz): | 100V |
| Tolerance: | -- |
| Power - Max: | 1.25W |
| Current - Reverse Leakage @ Vr: | 5µA @ 82V |
| Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 500mA |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | DO-214AC, SMA |
| Supplier Device Package: | DO-214AC (SMA) |
Description
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BZG04-82-HM3-08 application field and working principleThe BZG04-82-HM3-08 is a type of Zener Diode, which is predominantly used in various daily consumer electrical and electronic products. This component is available in a single diode package configuration and has an array of features and capabilities depending upon the specific needs of the application it is being used in. The BZG04-82-HM3-08 is primarily responsible for providing a steady efficient flow of electricity while being able to provide a large degree of protection from electrical surges that can damage internal components and cause harm to a user during operations. The component is rated at 3.0 volts, which is on the low side but is still able to perform its duties. The temperature as well as the power curves for the component are specifically designed to ensure that an even voltage is maintained and the component does not create additional heat, which can cause issues for other components located nearby. In terms of the components actual working principle, the diode is designed from a junction perspective. The component is composed of two distinct structures sharing a common junction. One side is designed as a P-type material and the other as an N-type material. The two sections are connected with a barrier usually composed of impurities that are filled within the material. When the component is inserted into a circuit, an electrical current is made to flow in the P-type region. As the current flows through the junction, the electrons enter the barrier but are blocked from leaving. This causes a voltage buildup in the barrier and increases the electricity in the N-type section. If the voltage continues to increase, the barrier will reach a breakdown point and allow the current to flow back into the P-type side, resulting in a two-way or bidirectional flow of electricity.The BZG04-82-HM3-08 is usually used in circuit designs meant for DC current, although the component can be used in other designs as well. The component can also be utilized in various controls, relays, circuit protection, voltage regulators and other light-load applications. In order to ensure the component is adequately isolated, it should be mounted on a heat sink or attached to any other heat dissipating material. Some other features of the BZG04-82-HM3-08 include a peak reverse power rating of 1W, a repletion range of 10-50V, a reverse recovery time of 10ms, and a junction to case thermal resistance of 250°C/W. Additionally, the component is also suitable for use in high-temperature environments up to 150°C.In conclusion, the BZG04-82-HM3-08 is an important component for ensuring an efficient flow of electricity while also providing protection from volts spikes that can damage internal circuitry. The component is designed from a junction perspective in order to provide a bi-directional flow of current and is usually used in high-temperature circuits, relays and voltage regulators. The component is also rated for a low voltage of 3.0V and is capable of dissipating heat effectively.The specific data is subject to PDF, and the above content is for reference
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BZG04-82-HM3-08 Datasheet/PDF