Allicdata Part #: | BZG05C33-HE3-TR3-ND |
Manufacturer Part#: |
BZG05C33-HE3-TR3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ZENER 33V 1.25W DO214AC |
More Detail: | Zener Diode 33V 1.25W ±5% Surface Mount DO-214AC |
DataSheet: | BZG05C33-HE3-TR3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Voltage - Zener (Nom) (Vz): | 33V |
Tolerance: | ±5% |
Power - Max: | 1.25W |
Impedance (Max) (Zzt): | 35 Ohms |
Current - Reverse Leakage @ Vr: | 500nA @ 24V |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 200mA |
Operating Temperature: | 150°C |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC |
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Introduction
The BZG05C33-HE3-TR3 is one type of diode that falls into the Zener family, specifically categorized as Single. This diode is a voltage regulator that is typically used in energy efficient circuits to protect devices from power-related problems that can be caused by surges or drops. It has some unique features that make it especially suitable for applications where stability is required. This article will discuss the general application field and working principle of the BZG05C33-HE3-TR3.
Application Field
The BZG05C33-HE3-TR3 is used in applications where voltage stabilization is required. It can be used in a variety of circuits, including those related to power, communications, or data processing. It is particularly beneficial in industrial applications, where power supply fluctuation is often an issue. It is also suitable for applications where a small load is present, as the current-handling capabilities of the BZG05C33-HE3-TR3 are quite limited.
Working Principle
The BZG05C33-HE3-TR3 operates on the principle of reverse-biased current conduction. It has two regions that make up its overall structure: a Cathode region and an Anode region. When the device is under reverse-bias operation, its Anode and Cathode junctions create a potential barrier. This potential barrier prevents current from flowing strongly through the device. When the base current is increased by the external circuit, however, electrons in the Cathode region become increasingly energetic, and they can eventually become “tunnelling” electrons which can flow through the potential barrier. This tunnelling effect enables current to flow through the device and this is known as the Zener breakdown or avalanche effect.
The amount of current that can flow through the BZG05C33-HE3-TR3 during the Zener breakdown depends on the value of its reverse bias voltage, as well as the temperature of the junction. The device will limit the voltage across its terminals to a specific value, and it can be used as a voltage regulator that provides a constant voltage output. Thanks to its thermal properties, it is also able to regulate any sudden changes in the external circuit. For example, if a circuit is loaded with a sudden surge of current or voltage, the device will “absorb” the excess energy and prevent it from passing through the circuit.
Conclusion
The BZG05C33-HE3-TR3 is a single Zener diode that is ideal for applications requiring voltage regulation. Its reverse-biased operation creates a potential barrier that prevents current from passing until the Zener breakdown is triggered. The device is able to regulate any sudden changes in the external circuit, and it can be used in a variety of circuits related to power, communications, or data processing. It is especially suitable for industrial applications, where power supply fluctuation can be an issue.
The specific data is subject to PDF, and the above content is for reference
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