BZW04-15BHE3/54

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BZW04-15BHE3/54 is a transient voltage suppressor (TVS) diode which provides protection from electrical overstress, typically induced by lightning or other sources. This device is configured as an array of four monolithic silicon devices which suppress destructive electrical transients and offer low capacitance, low clamping voltage and fast response time.

The BZW04-15BHE3/54 is designed for applications in various industries such as telecommunications, automotive, consumer electronics, computer networking, automotive, and power/data management. Its low capacitance makes it ideal for use in RF or high-speed communication lines.

The BZW04-15BHE3/54 also offers enhanced ESD, surge, and transient protection with high peak power dissipation. Its high surge current rating and low dynamic resistance allow it to safely absorb damaging high-energy transients with a minimal voltage drop.

The low reverse-leakage current capability of the BZW04-15BHE3/54 is excellent for protecting transistor gates and other ICs. Its fast response time to transients increases its usefulness in protecting sensitive components from failure.

The BZW04-15BHE3/54 works on the principle of avalanche breakdown. When a large voltage is applied across the TVS diode, it causes the p-n junction to break down. The breakdown occurs in a controlled manner, allowing the diode to absorb the energy and maintain its integrity. The TVS implements a “snubber” circuit to reduce the voltage peak across the diode during the breakdown. The snubber circuit is composed of a resistor and capacitor used to limit the peak current and reduce overshoot.

The BZW04-15BHE3/54 is ideal for applications where high peak power dissipation and enhanced ESD, surge, and transient protection are required. Its low capacitance, high surge current rating, fast response time, and low reverse-leakage current make it ideal for transmitting high-speed, sensitive data. The TVS diode is also well suited for protecting transistor gates and other ICs from transient events.

The specific data is subject to PDF, and the above content is for reference