BZX384B3V9-HE3-08

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Diodes form a cornerstone in the electronics industry, used ubiquitously as both current controlling elements and protecting circuit elements. The Zener type diode is a type of PN junction, commonly used for voltage regulation and voltage protection due to its characteristic of stabilizing an electrical voltage in a DC circuit when a certain reverse voltage is applied to it. Zener diodes are commonly used to stabilize voltage in low-power circuits, particularly those running on batteries. The BZX384B3V9-HE3-08 is a single Zener diode with stabilized voltage at 3.9 V and a power rating of 500 mW, intended for use in applications such as voltage regulation, transient voltage overshoot protection, and clamping circuits.

The construction of a Zener diode is the same as a basic diode, consisting of a single PN junction. However, a P-type semiconductor layer is added to the N-type layer, allowing electrons to easily tunnel through the P-type material. This is termed the Zener effect, and as a consequence when the device is reverse biased, electrons are quickly swept into the depleted region and a Zener breakdown takes place resulting in a voltage that is not too far from the initial reverse biasing voltage. This breakdown voltage is typically used to regulate the output voltage of low power DC circuits.

The essence of the Zener effect is that when the reverse bias applied to the PN junction exceeds a particular threshold, current continuously flows through the PN junction. As current moves through the PN junction it causes avalanche breakdown resulting in an exact stable voltage being produced regardless of the load being powered. The BZX384B3V9-HE3-08 diode is designed with a reverse breakdown voltage of 3.9V. This means that as long as the applied reverse voltage does not exceed 3.9 volts, it will not conduct, preventing undesired current flow. However, once the applied circuit voltage rises above 3.9 V, the PN junction will start to conduct a constant and predetermined amount of current. By using a Zener diode and a resistor in series, the current passing through the resistor can be precisely calculated, thereby allowing the regulated output voltage to be closely monitored, even under varying loads.

The BZX384B3V9-HE3-08, as with all Zener diodes, is a unidirectional device and is, as such, inherently a one way conductor. The device is normally open, meaning that current does not flow until the reverse voltage reaches 3.9 V. Once this threshold is achieved, current will flow through the device in the reverse direction, resulting in a constant and certain output voltage, determined by the Zener diode’s breakdown voltage. The diode’s power rating of 500 mW means that the device will not degrade due to excessive dissipation.

In summary, the BZX384B3V9-HE3-08 Zener diode has a breakdown voltage of 3.9V and a power rating of 500mW. This makes it ideally suited for use in applications such as voltage regulation, transient voltage overshoot protection, and clamping circuits. The Zener diode’s gate-like behavior, allowing only current flow in the reverse direction and under a predetermined voltage threshold condition, allows the circuit to remain stable even under variable load. As a result, the BZX384B3V9-HE3-08 is a robust and reliable device for low power DC applications.

The specific data is subject to PDF, and the above content is for reference