BZX384B6V8-E3-18

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A BZX384B6V8-E3-18 diode is a type of Zener diode from the Single family, which is designed to operate in a certain circuitry applications and is specifically designed for voltage regulation and for protection against overvoltage of a single polarity. The BZX384B6V8-E3-18 diode is composed of a single p-n junction that produces a reverse bias voltage of 6V.

The primary purpose of a Zener diode is to provide protection against an overvoltage of a single polarity. When the voltage across the diode exceeds its rated Zener voltage, it will begin to conduct, thus preventing overvoltage. This feature makes it an ideal choice for voltage regulation, especially in circuits that are sensitive to voltage fluctuations, like computers and other electronic devices.

The BZX384B6V8-E3-18 has an additional feature of reverse breakdown voltage, which allows it to remain in the \'off\' state until the reverse bias voltage exceeds the breakdown voltage. This feature makes it an excellent choice for applications where a rapid response to overvoltage is required. The reverse breakdown voltage of the BZX384B6V8-E3-18 diode is 6V.

The BZX384B6V8-E3-18 has a power dissipation rating of 800mW, and an operation junction temperature range of -55°C to +150°C. Its maximum reverse leakage current is 8µA at 25°C and its maximum forward voltage drop is 0.3V. Additionally, the diode is RoHS-compliant, meaning it is made without the use of environmentally hazardous materials.

The BZX384B6V8-E3-18 diode is commonly used in a variety of circuits for its ability to regulate voltage and for its protection against overvoltage of a single polarity. Some of its typical applications include power supplies, DC-DC converters, voltage regulators, overvoltage protection, and telecommunication systems. These applications require the protection of electrical and electronic circuits from excessive voltages, and the BZX384B6V8-E3-18 diode provides this protection with its reverse breakdown voltage.

The working principle of the BZX384B6V8-E3-18 diode is based on the PN-junction principle, wherein a small reverse bias voltage is needed to produce a decrease in the depletion region width, which allows current to flow across the junction in the reverse direction. When the voltage across the diode exceeds its Zener voltage, the diode then begins to conduct, thus preventing overvoltage. The reverse breakdown voltage of the BZX384B6V8-E3-18 diode is 6V.

The BZX384B6V8-E3-18 diode is an excellent choice for applications requiring protection from overvoltage of a single polarity, as well as precision voltage regulation. It is widely used in power supplies, DC-DC converters, voltage regulators, overvoltage protection, and telecommunication systems. It is composed of a single PN junction, operates with a reverse bias voltage of 6V, and has a power dissipation rating of 800mW. It is also RoHS-compliant, meaning that it is made without the use of environmentally hazardous materials.

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