BZX384C10-HE3-08

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Voltage - Zener (Nom) (Vz):	10V
Tolerance:	±5%
Power - Max:	200mW
Impedance (Max) (Zzt):	20 Ohms
Current - Reverse Leakage @ Vr:	200nA @ 7V
Operating Temperature:	-55°C ~ 150°C
Mounting Type:	Surface Mount
Package / Case:	SC-76, SOD-323
Supplier Device Package:	SOD-323

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BZX384C10-HE3-08 is a type of diode, which belongs to the specific subcategory of zener diode within single diodes. A zener diode is a special type of diode, which is designed to have a high reverse resistance property. Specifically, the BZX384C10-HE3-08 has a reverse breakdown voltage of 8 volts, at a heavily conservative current rate of 75 mA. A diode is generally described as an electronic device that can conduct current in one direction, while blocking current in the opposite direction. This type of diode, the BZX384C10-HE3-08, can, however, handle a small amount of the reversing direction current, which is its unique feature or characteristic.The core working principle behind the BZX384C10-HE3-08 is the application of voltage, which is referred to as a reverse voltage. This is a process by which the reverse voltage applied to the diode will cause a weak electric field to be created, which in turn causes the electrons from the majority charge carriers (the negatively charged electrons) to move more freely with respect to the depletion region. The depleted region is an area near the junction of the diode in which there is significantly less charge than the equilibrium value for that region. When the depletion region is exposed to a reverse voltage, the electric field, due to the addition of the voltage, causes the majority charge carriers to move more freely, creating an inversion layer. The layer is created due to the majority charge carriers, the electrons, being weakly attracted to the depletion region, as opposed to being strongly repelled as would normally be the case. This movement of the electrons is known as the Zener tunneling effect. This resulting layer of majority charge carriers creates a low resistance path that electrons can follow, allowing them to move through the diode in the opposite direction, even when a reverse voltage is applied.The application of the reverse voltage, in the case of the BZX384C10-HE3-08, has one primary purpose. For this type of diode, the reverse voltage is able to protect the diode against damage caused by overcurrent. Oftentimes, electronic components experience overcurrent, which occurs when the current that flows through the diode exceeds the maximum value for the diode. If this event happens without the diode having the protection of reverse voltage, then the diode will be severely damaged from the overcurrent. The application of reverse voltage, however, prevents such damage from occurring by limiting the current that is able to pass through the diode to its maximum safe limit. The BZX384C10-HE3-08 has a wide range of applications in various electronics circuits. This type of diode has been most commonly used for voltage regulation, for the purpose of protecting the circuit from power surges, which can often cause a failure in the circuit or the electronic device connected to it. This diode is also used in the automotive industry, such as in the circuitry of cars. The BZX384C10-HE3-08 can be used in any circuit that requires protection from voltage spikes, whether it be in a radio, television, or other electronic device. In addition to its use in voltage regulation and protection against voltage spikes, the BZX384C10-HE3-08 is also commonly utilized in the circuitry of computers and other digital devices for the purpose of providing a transmission gate. A transmission gate is a device that is able to switch the voltage of a signal by connecting or disconnecting two different interfaces.

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