BZX384C6V2-HE3-08 Allicdata Electronics
Allicdata Part #:

BZX384C6V2-HE3-08GITR-ND

Manufacturer Part#:

BZX384C6V2-HE3-08

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 6.2V 200MW SOD323
More Detail: Zener Diode 6.2V 200mW ±5% Surface Mount SOD-323
DataSheet: BZX384C6V2-HE3-08 datasheetBZX384C6V2-HE3-08 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 6.2V
Tolerance: ±5%
Power - Max: 200mW
Impedance (Max) (Zzt): 10 Ohms
Current - Reverse Leakage @ Vr: 3µA @ 4V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Description

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Diodes - Zener - Single is one of the many diode categories and is widely applied in various areas. BZX384C6V2-HE3-08 is one of the most popular diodes in this category. This article will discuss the application fields and working principles of BZX384C6V2-HE3-08.

The application fields of BZX384C6V2-HE3-08 include industrial and commercial DC-DC converters and AC/DC mains power supplies. Due to its stable and reliable performance, it is widely used in power supply, as well as computer, instrument and medical device designs. In addition, its wide voltage range makes it suitable for general purpose applications, such as voltage regulator circuit or voltage limiter.

BZX384C6V2-HE3-08 is based on the principle of reverse breakdown, which is a significant feature of the Zener diode. When forward bias is applied across the diode, a certain amount of electric current will flow through it, but the flow will be limited by the diode\'s junction breakdown voltage. When the voltage is increased further, the diode will reach its breakdown voltage and the current begins to increase rapidly, allowing large currents to flow through the diode.

When reverse bias is applied across the diode, the reverse current remains low, since the electric field surrounding the junction is so strong that it prohibits the majority of carriers from reaching the junction and allows only a few to reach, which leads to a weak current flow. When the reverse bias approaches the breakdown voltage, the electric field is disturbed and more carriers can flow through it, causing the current to increase rapidly.

The breakdown voltage of the BZX384C6V2-HE3-08 is 6V and its maximum power dissipation is 500 mW. It has a low dynamic resistance, which ensures stable voltage and high surge current capability. Furthermore, it has an ultra-fast recovery time, which enables high-speed switching.

In conclusion, BZX384C6V2-HE3-08 belongs to the Diodes - Zener - Single category and is widely used in various applications. It is based on the reverse breakdown principle, which allows large currents to flow through the diode whenever the voltage reaches its breakdown voltage. With its stable voltage and fast recovery time, it is ideal for industrial and commercial designs.

The specific data is subject to PDF, and the above content is for reference

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