BZX79-B6V8,113

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Voltage - Zener (Nom) (Vz):	6.8V
Tolerance:	±2%
Power - Max:	400mW
Impedance (Max) (Zzt):	15 Ohms
Current - Reverse Leakage @ Vr:	2µA @ 4V
Voltage - Forward (Vf) (Max) @ If:	900mV @ 10mA
Operating Temperature:	-65°C ~ 200°C
Mounting Type:	Through Hole
Package / Case:	DO-204AH, DO-35, Axial
Supplier Device Package:	ALF2
Base Part Number:	BZX79B6V8

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IntroductionThe BZX79-B6V8,113 is a Zener single diode. It is designed to provide an efficient and cost-effective solution to voltage regulation requirements. The diode is available in several packages with various electrical characteristics that can be used in various applications.Application FieldThe BZX79-B6V8,113 is a high-current, low-capacitance general-purpose Zener single diode. It is suitable for use in a variety of applications where voltage regulation is required, such as power supply regulation, voltage regulation, electro-magnetic interference, and wave shaping.The BZX79-B6V8,113 is designed to provide an efficient and cost-effective solution to voltage regulation requirements. The device is available in a variety of packages, offering a range of electrical characteristics suitable for various applications. These include wave shaping, power supply regulation, and electro-magnetic interference. The device offers excellent thermal, mechanical, and electrical properties and is suitable for use in a variety of voltage regulation applications.Working PrincipleThe BZX79-B6V8,113 is a Zener single diode, which has a specific breakdown voltage. The diode works by providing a voltage drop across its terminals when the applied voltage is greater than its breakdown voltage. This effectively creates a voltage regulator that can be used in various applications.The Zener single diode is a two-terminal device that consists of two distinct layers of semiconductor material. The main layer is typically composed of silicon and is referred to as the “control layer”. The other layer is composed of a transition metal oxide and is known as the “blocking layer”.The control layer is composed of a negative doped region and a positive doped region. This creates an electric field between the two terminals. When the applied voltage across the terminals is increased, the electric field increases until it reaches the breakdown voltage. At this point, the breakdown voltage is exceeded and the device allows a current to flow between the two terminals. The voltage drop across the device is controlled by the breakdown voltage.The BZX79-B6V8,113 is designed to offer an efficient and cost effective solution to voltage regulation requirements. The device is available in a variety of packages and provides a variety of electrical characteristics suitable for various applications. The device provides excellent thermal, mechanical, and electrical properties and is suitable for use in a variety of voltage regulation applications.

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