Allicdata Part #: | BZX79-C20,113-ND |
Manufacturer Part#: |
BZX79-C20,113 |
Price: | $ 0.01 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | DIODE ZENER 20V 400MW ALF2 |
More Detail: | Zener Diode 20V 400mW ±5% Through Hole ALF2 |
DataSheet: | BZX79-C20,113 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.01177 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 20V |
Tolerance: | ±5% |
Power - Max: | 400mW |
Impedance (Max) (Zzt): | 55 Ohms |
Current - Reverse Leakage @ Vr: | 50nA @ 14V |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 10mA |
Operating Temperature: | -65°C ~ 200°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | ALF2 |
Base Part Number: | BZX79C20 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
BZX79-C20,113 is a zinc doped silicon PN junction semiconductor device. It can be classified under diodes-Zener-Single category. It is a single Zener diode with 20V Zener voltage and low dynamic resistance. It is widely used in various applications with its various unique features.
Features
- Low equilibrium forward voltage drop
- Excellent temperature stability
- High Maximum Reverse Leakage Current
- High Thermal Resistance
- High Maximum Reverse Surge Current
Mechanical Data
- Case Style: DO-35
- Terminal Type: Through Hole
- Moisture Sensitivity Level: 1
- Height (Max.): 5.77 mm (0.2275 inch)
- Width (Max.): 8.25 mm (0.3254 inch)
- Depth (Max.): 6.3 mm (0.2480 inch)
- Weight (Typ.): 0.03 grams (0.001 ounce)
Applications
BZX79-C20,113 has various applications such as in low voltage supplies, voltage regulator networks, filters, voltage multiplier circuits, temperature tracking in automated control systems, temperature and bias compensation in electronic circuits, and automotive applications.
Working Principle
The working principle of the BZX79-C20,113 diode is based on the PN junction. The PN junction is created by depositing a thin layer of zinc doped silicon on the surface of a semiconductor base material. This layer acts as a barrier and creates a region of depleted carriers on either side of the junction in which depletion capacitance is formed. The depletion capacitance is proportional to the cross sectional area of the junction and is independent of the doping levels. When a reverse bias is applied to the diode, the electrons and holes are forced away from each other and an electric field is created. This electric field serves to repel the carriers and create a reverse bias in the junction which further increases the depletion capacitance, thereby increasing the diode\'s breakdown voltage and making it suitable for applications such as voltage regulator networks.
When forward current is applied, the carriers form a bridge across the PN junction and the depletion region decreases. This causes the resistance to drop and allows current to flow. The voltage across the diode is determined by the Zener voltage of the diode. BZX79-C20,113 has a Zener voltage of 20V. This allows the diode to be used in a variety of applications that require a low voltage supply. It is also suitable for use in power supplies and overvoltage protection circuits.
The specific data is subject to PDF, and the above content is for reference
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