BZX79-C36,133

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The BZX79-C36,133 is a single Zener diode from the BZX79 series from NXP semiconductors. It is designed to protect circuits from overvoltage transients. It has a voltage rating of 33 volts and a power dissipation of 500 mW. The BZX79-C36,133 is composed of a PN junction and a proprietary barrier material, which enables it to maintain a stable and linear current-voltage characteristics over a range of operating temperatures.

The BZX79-C36,133 provides several applications, including voltage regulation, ESD protection, overvoltage protection and temperature compensation. It can be used in telecommunications equipment, computer systems, instrumentation and scientific apparatus and automotive electronics systems. It is also capable of operating under harsh conditions, due to its high temperature coefficient and surge capabilities.

The working principle of the BZX79-C36,133 is fairly simple. When an overvoltage occurs on the circuit, the diode limits the voltage to the Zener voltage rating of 33V. This is done by creating an avalanche breakdown in the junction and allowing electrons to flow through the device, controlling the voltage instead of allowing current to flow freely. The device is designed with an internal barrier to ensure that the current does not flow beyond the rated voltage.

The BZX79-C36,133 also has high surge capability, as well as high temperature coefficient. This means that it can withstand greater amounts of current flow than traditional Zener diodes, making it well suited for applications in harsh environments. It also has low forward voltage drop and low leakage current, making it ideal for overvoltage protection in demanding applications.

The BZX79-C36,133 is an excellent choice for a variety of applications, due to its wide range of features and its highly reliable operation. It is a desirable choice for those looking for a durable, reliable and cost-effective solution for overvoltage protection in their circuits.

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