BZX79-C3V3,133

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The BZX79-C3V3, 133 is a silicon-based zener diode that can commonly be found in it\'s SOD-323 package. It is a video device and usually used in various communication circuits. The device is capable of regulating at a voltage somewhere between 3.13 volts to 3.30 volts, and is a single diode.

The device is designed to be employed in a variety of low-power circuits, such as audio and video daisy-chain systems. It is designed to regulate current and voltage across the device and to prevent excess current flow. This is done through a phenomenon known as the Zener breakdown effect. The Zener breakdown occurs when the serica insulating layers depolarize and create a very thin barrier of electrons, blocking the current from flowing from the anode to the cathode. This allows the current to stay regulated, and thus can be used for applications such as audio, video and RF transmissions.

The device is mainly employed in voltage-regulation or noise-reduction circuits. It can also be used in an array of audio or video diagrams for signal-attenuation or level-shifting.The device is able to safely handle currents that are up to 1.5A and has a maximum reverse leakage current of 1 μA. It is capable of dissipating power up to 500 mW, and is certified to IEC 60068-2-34, SZOO11, and other international standards.

The device has a breakdown voltage of approximately 3.30 V and can be used to provide a regulated voltage to a variety of analog, RF, video and audio components. It has a reverse-recovery time of approximately 20 ns, and is designed to operate over a temperature range of -65°C to +150°C. It has a low capacitance of 8.6 pF that enables it to provide very low-impedance in high-frequency circuits. The device is also capable of handling current in reverse direction at voltages up to 75V.

The BZX79-C3V3, 133 is a single zener diode normally found in the SOD-323 package. The device is mainly used in audio, video, RF and other communication circuits, mainly for voltage/current regulation and noise-reduction. The device is can withstand a reverse leakage current of up to 1 μA and is capable of dissipating a maximum power rating of 500 mW. It has a breakdown voltage of approximately 3.30 V, and a reverse recovery time of approximately 20 ns. It is designed to operate at temperatures ranging from -65°C to +150°C, and has a low capacitance of 8.6 pF. The BZX79-C3V3, 133 is a single diode that can be employed in various low-power circuits and provides reliable voltage regulation and noise reduction.

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