BZX79C11_T50R

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Diodes - Zener - Single

The BZX79C11_T50R diode is a Silicon epitaxial planar type zener diode which offers stability reliable operation and high reliability. It is rated with a peak reverse operating voltage of 11V and with a temperature coefficient of 6.2 mV/°C. This device can be used in a wide range of applications and operates in the electrical environment of both analog and digital circuits. It is ideal for use in voltage regulation and overvoltage protection.

Working Principle

BZX79C11_T50R diodes operate in the breakdown region. This occurs when the reverse voltage across the diode exceeds its specified rated voltage. During breakdown, a large electrical current, typically less than 5 mA, is allowed to flow through the device and this is what is used to regulate the voltage across the device.

When the voltage across the diode is lower than the breakdown voltage, the diode is reverse biased and acts as a normal diode, that is, no current passes through it. When the voltage reaches the breakdown voltage, the diode starts to conduct and a large current is allowed to pass through it, which then maintains a constant voltage drop across it. This is how the device achieves the desired voltage regulation for various applications.

Application Field

BZX79C11_T50R diodes are widely used in power supply circuits, particularly in linear power supplies and in adjustable voltage regulators.

They can also be used in digital circuits, especially in high-voltage loads, such as microprocessor-based digital circuits and memory devices. This device is also useful in laser circuits and in surge suppression.

Additionally, BZX79C11_T50R diodes can be used in applications requiring impedance matching and noise suppression. This device is also suitable for use in capacitive coupled circuits, for voltage clamping and other similar applications.

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