BZX84-B3V9,215 Allicdata Electronics
Allicdata Part #:

1727-6253-2-ND

Manufacturer Part#:

BZX84-B3V9,215

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: DIODE ZENER 3.9V 250MW SOT23
More Detail: Zener Diode 3.9V 250mW ±2% Surface Mount TO-236AB ...
DataSheet: BZX84-B3V9,215 datasheetBZX84-B3V9,215 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.02656
6000 +: $ 0.02418
15000 +: $ 0.02132
30000 +: $ 0.01942
75000 +: $ 0.01751
150000 +: $ 0.01497
Stock 1000Can Ship Immediately
$ 0.03
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 3.9V
Tolerance: ±2%
Power - Max: 250mW
Impedance (Max) (Zzt): 90 Ohms
Current - Reverse Leakage @ Vr: 3µA @ 1V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)
Base Part Number: BZX84B3V9
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Diodes - Zener - Single

The BZX84-B3V9,215 is a type of diode that falls into the single zener diode category. It is a low current zener diode and popular in low power applications. This type of diode offers a reasonable price combined with low noise and low capacitance.

A zener diode is a type of diode which, instead of acting as an open circuit, conducts in reverse. It does this once the Zener voltage, or breakdown voltage, has been exceeded. This breakdown voltage is the voltage at which conduction in reverse takes place. The BZX84-B3V9,215 has a maximum power dissipation of 350mW, a zener voltage range of 3.5V to 4.3V, and a zener impedance range of 5.6Ω to 12Ω. It is also rated for maximum operating temperature of 150°C and a no avalanche parameter of fully-rated valleys.

The working principle of the BZX84-B3V9,215 is based on the effect of the Zener breakdown. When this diode is forward biased, electrons from the N-type material combine with the holes from the P-type material to create a circuit commonly referred to as a ‘depletion region’. This is an area of the diode with no electrons or holes, and consequently no current flow.

When the reverse bias voltage on the diode is increased past the Zener voltage, some of the electrons in the depletion region become energised. As a result, they start to move towards the opposite side of the junction, carrying some of the energy with them. This causes a reaction in forward bias and a small current flow across the diode. The energy given off when the electron passes through the junction is responsible for the zener breakdown effect.

The BZX84-B3V9,215 have various applications including in portable consumer electronics, surveillance systems, automotive control circuits, protection circuits and data lines. They can be used as a protective device, helping to protect other components by ‘clamping’ voltage levels, or as an active component, controlled by a microcontroller for precise voltage levels.

The main advantages of the BZX84-B3V9,215 are it low cost, low current requirements, low noise and low capacitance. It is also ideal for low power applications where precise voltage regulation is needed. These features make this particular model ideal for a variety of electronic applications, from consumer electronics to automotive control.

The BZX84-B3V9,215 is an excellent choice for those looking for low power applications that require precise voltage regulation and low cost. With its low current requirements and low noise, it is particularly well-suited for consumer and automotive electronics.

The specific data is subject to PDF, and the above content is for reference

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