BZX84B12-7-F

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Voltage - Zener (Nom) (Vz):	12V
Tolerance:	±2%
Power - Max:	300mW
Impedance (Max) (Zzt):	25 Ohms
Current - Reverse Leakage @ Vr:	100nA @ 8V
Voltage - Forward (Vf) (Max) @ If:	900mV @ 10mA
Operating Temperature:	-65°C ~ 150°C
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23

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Introduction to BZX84B12-7-F

The BZX84B12-7-F is a surface mount Zener diode, which is specially designed to provide optimal performance in both reverse voltage protection and voltage regulation applications. It is manufactured by Exar Corporation, a leading global supplier of analog, power, and mixed-signal integrated circuits (ICs) for the industrial and commercial markets. The BZX84B12-7-F has a nominal breakdown voltage of 12V, a maximum operating current of 7 milliamps and a capacitance of 1.4 picofarad. It is available in the standard SOT-23-3 package, with a maximum junction temperature of 125 degrees Celsius.

Application Field

The BZX84B12-7-F is an ideal component for use in a variety of applications, particularly those that require both low-noise and fast switch-on/off performance. Examples of applications that may use the BZX84B12-7-F include: reverse voltage protection, voltage regulation, LED driver circuit protection, and CMOS gate ESD protection. In addition, the BZX84B12-7-F is suitable for use with a wide variety of logic devices and MOSFETs. It is also ideal for triggering solid-state relays, as it offers fast and quiet switch-on/off performance.

Working Principle

The BZX84B12-7-F functions according to the principle that when a reverse voltage is applied to the PN junction, the current flows from the anode to the cathode and the junction voltage rises to a predetermined breakdown voltage. This breakdown voltage is dependent on the doping concentration of the junction, and it is this property that makes the BZX84B12-7-F a suitable component for voltage regulation and reverse voltage protection. When the current reaches a certain level, the junction breaks down, allowing the current to flow in the reverse direction. This reverse current provides a regulated voltage that is suitable for many applications.

To use the BZX84B12-7-F as a voltage regulator, the input voltage must be equal to or greater than the breakdown voltage of 12V under forward bias. When the input voltage is greater than the breakdown voltage, the diode acts as a constant resistor, passing a current that is proportional to the difference between the input voltage and 12V. This current is then used to generate the output voltage, which can be regulated by adjusting the ratio of input voltage to breakdown voltage. In addition, the BZX84B12-7-F can also be used as a reverse voltage protection device; when the diode is reverse biased, it will cause a breakdown, diverting current away from damaging circuits.

Conclusion

The BZX84B12-7-F diode is an ideal component for use in applications which require both fast and quiet switch-on/off performance, as well as robust voltage regulation and reverse voltage protection. It is suitable for use with a wide range of logic devices and MOSFETs, and its capacitance of 1.4 picofarad makes it well-suited for triggering solid-state relays. With its nominal breakdown voltage of 12V, maximum operating current of 7 milliamps, and maximum junction temperature of 125 degrees Celsius, the BZX84B12-7-F is the perfect choice for any voltage regulation or reverse voltage protection application.

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