BZX84B20-7-F

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Diodes – Zener – Single is one type of electronic component that offers precise voltage regulation and high temp stability. Among the various Zener diodes available, the BZX84B20-7-F is a type commonly used and is recognized for its precise temperature coefficient and wide range of operating temperature. In this article, we will investigate the application fields and working principles of this Zener type.

Application Fields of BZX84B20-7-F

The BZX84B20-7-F is a small signal, low voltage Zener diode. It can handle 500 mW at maximum power and has a breakdown voltage of 7.0 V at a nominal temperature of 25 degrees C. It is commonly used in applications where precise voltage regulation and temperature stability are key design factors, such as in voltage clippers, current regulators, and peak detectors. Moreover, it is also used in AC switching applications, ESD protection, and pulse bearing circuits.

In addition, the BZX84B20-7-F can be found in applications where noise suppression and power saving are important. When used in conjunction with capacitors and resistors, the device can help dampen out undesirable noise above certain voltage levels, while dissipating less power than conventional diodes.

Working Principle of BZX84B20-7-F

The BZX84B20-7-F Zener diode employs the use of a PN junction and junction tunneling. A PN junction, or diode, is created by connecting a P-type material to an N-type material, creating a single-crystal semiconductor. This junction creates a directed channel for the flow of current in only one direction, the “forward” direction.

While conducting electricity in the forward direction, a Zener diode also exhibits a reversed breakdown voltage, or voltage that is necessary to cause conduction in the reverse direction. This breakdown voltage is precisely pre-determined in BZX84B20-7-F and is unique to each semiconductor component.

When a voltage highly exceeding the breakdown voltage is applied to the device, it is said to be in the “breakdown” or “Zener breakdown” mode. This state allows the device to conduct an amount of current in the reverse direction proportional to that applied voltage.

In the BZX84B20-7-F, the breakdown voltage is enabled by an operation known as junction tunneling. This phenomenon, which is related to quantum mechanics, is when a free electron exclusively penetrates a barrier between two electrical charge states. This operation carries a heavily concentrated electric field on the opposite side of the PN junction, making it possible for electrons to break through the barrier and enable current to flow.

Conclusion

The BZX84B20-7-F is a low voltage Zener diode that excels in applications requiring precise voltage regulation and temperature stability. Its wide range of operating temperatures and its ability to suppress noise and save power makes it a popular choice for a wide range of applications. The device utilizes PN junction diodes and junction tunneling to enable its precise breakdown voltage operation.

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