BZX84C10ET1

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Voltage - Zener (Nom) (Vz):	10V
Tolerance:	±6%
Power - Max:	225mW
Impedance (Max) (Zzt):	20 Ohms
Current - Reverse Leakage @ Vr:	200nA @ 7V
Voltage - Forward (Vf) (Max) @ If:	900mV @ 10mA
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3 (TO-236)
Base Part Number:	BZX84C10

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BZX84C10ET1 Application Fields and Working Principle

Introduction

The BZX84C10ET1 is a single zener diode in a SOT-23 main package from Vishay Semiconductors. This device is a general purpose silicon epitaxial planar PN junction diode which can be used for low-level voltage regulation, voltage clamping, current limiting, and DC functions. This device is well suited for many commercial and industrial applications such as static clamps, automatic protection of components, and circuit protection.

Application Field

The BZX84C10ET1 is a single zener diode that is designed for low-level voltage regulation, voltage clamping, current limiting, and DC functions. The device can be used in many commercial and industrial applications, such as static clamps, automatic protection of components, and circuit protection. It is also suitable for use in electronic equipment, telephone systems, computers, LED lighting, medical equipment, industrial control systems, factories, and automotive applications.

Working Principle

The working principle of the BZX84C10ET1 is based on the PN junction, which is a type of semiconductor diode formed by joining two pieces of material with opposite polarities. One side is doped with a positively charged type of semiconductor material, and the other side is doped with a negatively charged type of material. The junction between the materials is called the PN junction.Once the PN junction is created, a built-in potential barrier is created. This potential barrier prevents the flow of free electrons from one side of the junction to the other. When a voltage is applied to the junction, the potential barrier varies with the applied voltage and the free electrons start to flow. This flow of electrons is called current. The amount of current that is allowed to flow through the PN junction is determined by the voltage applied to the junction.For zener diodes, when the applied voltage is increased to a certain value, the current will increase drastically, allowing more current to flow through the diode and thus regulating the voltage. The voltage at which this drastic current increase occurs is called the zener voltage. The BZX84C10ET1 is designed to have a zener voltage of 8.4V.

Conclusion

The BZX84C10ET1 is a single zener diode from Vishay Semiconductors that can be used for low-level voltage regulation, voltage clamping, current limiting, and DC functions. Through the working principle of the PN junction, the BZX84C10ET1 has a zener voltage of 8.4V and can be used in many commercial and industrial applications such as static clamps and automatic protection of components.

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