BZX84C10T-7-F Allicdata Electronics

BZX84C10T-7-F Discrete Semiconductor Products

Allicdata Part #:

BZX84C10T-FDITR-ND

Manufacturer Part#:

BZX84C10T-7-F

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: DIODE ZENER 10V 150MW SOT523
More Detail: Zener Diode 10V 150mW ±6% Surface Mount SOT-523
DataSheet: BZX84C10T-7-F datasheetBZX84C10T-7-F Datasheet/PDF
Quantity: 6000
3000 +: $ 0.04347
6000 +: $ 0.03912
15000 +: $ 0.03478
30000 +: $ 0.03260
75000 +: $ 0.02891
Stock 6000Can Ship Immediately
$ 0.05
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 10V
Tolerance: ±6%
Power - Max: 150mW
Impedance (Max) (Zzt): 20 Ohms
Current - Reverse Leakage @ Vr: 200nA @ 7V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOT-523
Supplier Device Package: SOT-523
Base Part Number: BZX84C10
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BZX84C10T-7-F is a type of single Zener diode. This type of diode can provide effective voltage regulation and act as a simple voltage regulator. The diode can also be used for signal clamping and to protect electronic components from an overvoltage condition.

A Zener diode is a type of semiconductor diode that is designed to operate in the reverse-bias region of the PN junction. In this region, electrons flow from the N region to the P region, creating a high electric field at the junction. This helps to control current flow in the reverse direction.

The Zener diode works on the principle of avalanche breakdown. In the avalanche breakdown effect, when the reverse voltage applied to the junction exceeds a certain threshold, it creates a high electric field. This causes electrons to be accelerated across the junction, resulting in electrons and holes combining to produce additional electrons. These additional electrons then create more electron-hole pairs in a process called cascading multiplication.

In a Zener diode, the energy gap between the PN junction is kept narrow, which creates a higher electric field. This results in an avalanche breakdown of the diode at a lower reverse voltage than in a normal diode. The breakdown voltage can be controlled by adjusting the doping concentration on either side of the junction.

The BZX84C10T-7-F single Zener diode has a data sheet that lists a maximum reverse voltage of 7 volts, with a power dissipation rating of 500 mW and a maximum total device dissipation of 2 watts. This makes it a suitable device for a variety of circuit protection functions, like voltage clamping and voltage regulation.

This Zener diode can be used in a variety of applications such as power supply line protection, transient voltage suppression, and precision voltage regulation. It can be used to protect sensitive electronic components from an overvoltage condition and to minimize the voltage spike that occurs during transients. It can also be used for low-voltage voltage references or for voltage-controlled oscillators.

The BZX84C10T-7-F single Zener diode is an effective voltage regulator due to its avalanche breakdown characteristics. It is a highly reliable device with a low temperature performance. The diode is also very easy to use and can be used in many different applications.

In summary, the BZX84C10T-7-F single Zener diode is a reliable and effective device for voltage regulation, voltage clamping, and voltage protection. It can be used in applications such as power supply line protection, voltage-controlled oscillators, and precision voltage regulation. The diode is relatively easy to use and is manufactured with low temperature performance.

The specific data is subject to PDF, and the above content is for reference

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