BZX84C12-E3-08

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Active
Voltage - Zener (Nom) (Vz):	12V
Tolerance:	±5%
Power - Max:	300mW
Impedance (Max) (Zzt):	25 Ohms
Current - Reverse Leakage @ Vr:	100nA @ 8V
Operating Temperature:	-55°C ~ 150°C
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3

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The BZX84C12-E3-08 is a Zener diode from a long line of competitive diode products manufactured by thyssenkrupp Electronics. It is designed to operate at Voltages ranging from 4.5V to 63V DC, with a total power dissipation of 8W. It has an operating temperature range of -10°C to +125°C, and its Cathode is labeled with the “S” symbol. The BZX84C12-E3-08 is a single Zener diode with a breakdown Voltage of 12V. It has a reverse Voltage rating of 6V DC and a reverse Current of 6mA. It also has a maximum reverse Voltage of 12V DC, with a maximum forward Voltage of 1.5V. The device has an ESD protection up to 8kV HBM and 3kV CDM. The device is designed to comply with European RoHS standards. The BZX84C12-E3-08 is primarily used in applications such as over-voltage protection, voltage regulation, and power supply design. It is also used in linear regulator designs, voltage clamping, and transient voltage suppression. It can be used as part of an automotive system, in an office automation or home automation system, in medical equipment, telecommunication, or consumer electronics. The BZX84C12-E3-08 operates by using a Zener breakdown effect. Zener breakdown is a high-current conduction through a semiconductor diode at which the reverse current is directly proportional to the reverse voltage. This occurs when the electric field across a breakdown junction is strong enough to pull in electrons from the P-type material to the N-type material. This results in a current, which is limited only by the external resistor, to flow through the diode. This current can then be used for regulation. The BZX84C12-E3-08 also employs avalanche breakdown resulting in a low leakage current and fast switching performance. This is due to the Joule heating produced when a high electric field is applied. The high electric field, in this case, accelerates the electrons in the semiconductor material to high velocities, causing numerous collisions with the lattice atoms and producing a large amount of heat. This heat can cause the PN junction of the diode to break, allowing electrons to pass through it, resulting in current flow. Overall, the BZX84C12-E3-08 is an efficient and reliable Zener diode for many different applications. It has a wide operating temperature range and is designed for high ESD protection. With its high current conduction and reverse voltage properties, it is suitable for over-voltage protection, voltage regulation, and power supply designs. With its avalanche breakdown feature, the BZX84C12-E3-08 is a great choice for many applications, particularly those in which fast switching performance and low leakage currents are required.

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