BZX84C12LT1G Allicdata Electronics
Allicdata Part #:

BZX84C12LT1GOSTR-ND

Manufacturer Part#:

BZX84C12LT1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: DIODE ZENER 12V 250MW SOT23-3
More Detail: Zener Diode 12V 250mW ±5% Surface Mount SOT-23-3 (...
DataSheet: BZX84C12LT1G datasheetBZX84C12LT1G Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 12V
Tolerance: ±5%
Power - Max: 250mW
Impedance (Max) (Zzt): 25 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 8V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Base Part Number: BZX84C12
Description

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The BZX84C12LT1G is a single Zener diode. It operates in the forward-biased, reverse-biased, and avalanche breakdown regions. Zener diodes, sometimes called the breakdown or protection diode, are used to limit the voltage applied across a circuit. It is thus used to provide an almost fixed voltage reference across a wide range of current, temperature, and frequency ranges. The BZX84C12LT1G is well-suited for use in voltage-regulated power supplies, peak detectors, voltage clamping, AC-DC voltage regulators, and over-voltage/over-current protection.

In its forward-biased region, the BZX84C12LT1G diode behaves like a normal diode. During this region, a small voltage applied to the cathode side causes a large current flow through the p−n junction. It is important to note that its forward voltage drop is the same as the other diodes within this voltage range. The BZX84C12LT1G allows for a higher current flow capability than other diodes with the same voltage rating. Once the applied voltage reaches a certain level, it enters the breakdown region. Once it is in the breakdown region, the current entering the diode is limited regardless of the applied voltage. At the beginning of the breakdown region, the diode is in the avalanche breakdown region. This region is characterized by a more rapid decrease in voltage than the reverse biased region. Finally, the BZX84C12LT1G enters Zener breakdown region, where the voltage across the diode is about constant or decreases very slightly for an increase in applied current.

The BZX84C12LT1G is an axial-lead diode packaged in a small plastic case. Its leads are made from solid propylene and can support up to 1.25 amps of current. Its maximum power rating is 625mW, and its maximum operating temperature is 175°C. Additionally, it can withstand a continuous reverse voltage of up to 7.5 Volts and a maximum peak surge power of up to 12.5 Watts.

In summary, the BZX84C12LT1G is a single Zener diode used in various applications such as voltage-regulated power supplies, peak detectors, voltage clamping, AC-DC voltage regulators, and over-voltage/over-current protection. It is a multiple type diode which allows it to forward bias, reverse bias, and avalanche breakdown. It is packaged in a small plastic case and can withstand a maximum operating temperature of 175°C. It can support up to 1.25 amps of current and a peak surge power of up to 12.5 Watts.

The specific data is subject to PDF, and the above content is for reference

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