BZX84C16-HE3-08 Allicdata Electronics
Allicdata Part #:

BZX84C16-HE3-08GITR-ND

Manufacturer Part#:

BZX84C16-HE3-08

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 16V 300MW SOT23-3
More Detail: Zener Diode 16V 300mW ±5% Surface Mount SOT-23-3
DataSheet: BZX84C16-HE3-08 datasheetBZX84C16-HE3-08 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 16V
Tolerance: ±5%
Power - Max: 300mW
Impedance (Max) (Zzt): 40 Ohms
Current - Reverse Leakage @ Vr: 50nA @ 11.2V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Description

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BZX84C16-HE3-08 application field and working principle

The BZX84C16-HE3-08 Zener Diode is an integrated, single component that combines the properties of a Zener Diode with the properties of a standard diode. This part is very useful in creating low cost andsimple power supply circuits. It is also used in producing voltage and current regulation circuit applications.

The BZX84C16-HE3-08 is a 12V dual polarity diode, with a 200mA maximum current. Its cathode and anode pins have 8mm spacing from the middle pin and are marked with a plus and a minus sign respectively. The pin out for the BZX84C16-HE3-08 is shown in the diagram below.

bzx84c16-he3-08-pinout

The BZX84C16-HE3-08 operates like a standard diode when the voltage across the two ends is reverse biased. It then acts like a Zener diode when the voltage across the two ends is forward biased. When in a forward bias condition, the diode passes current and the voltage is held at a regulated value.

Working Principle

The BZX84C16-HE3-08 Zener Diode consists of an integrated structure, which includes a P-type region and an N-type region. In the forward bias condition, the anode will be more positive than the cathode. This allows electrons to flow from the anode to the cathode, where they are collected in the depletion layer of the P-N junction. As the voltage increases, the electric field generated by the majority electrons is weakened and the minority electrons, now located around the depletion layer, flow from the anode to the cathode.

When the voltage exceeds the Zener breakdown voltage, the current dramatically increases. This is due to the number of minority electrons in the depletion layer, which becomes very large.

In the reverse bias condition, the electric field generated by the majority carriers accumulates in the depletion layer, preventing the flow of electrons. This prevents the formation of a depletion layer and keeps the diode in an open state. As a result, no current can pass through the diode in this condition.

Application Field

The BZX84C16-HE3-08 is a very useful component for applications such as:

  • Power supplies
  • Voltage and current regulation
  • AC-DC power conversion
  • Rectification
  • Voltage and current sensing

The BZX84C16-HE3-08 can be used in such applications due to its dual characteristics. When in a forward biased condition, it acts like a standard diode and its voltage drop is relatively small. When in a reverse biased condition, the diode acts like a Zener diode and it breaks down at a certain voltage.

The BZX84C16-HE3-08 has many advantages compared to other types of Zener Diode, such as low cost and small size. It can also handle higher power ratings and operates at a much lower voltage than most Zener diodes. This makes it a great choice for low power applications.

Because of its low cost and versatility, the BZX84C16-HE3-08 is increasingly being used in a wide range of different applications. It is a great way to produce low cost and reliable circuits for controlling the flow of current and voltage in your circuits.

The specific data is subject to PDF, and the above content is for reference

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