BZX84C6V2W-TP Allicdata Electronics

BZX84C6V2W-TP Discrete Semiconductor Products

Allicdata Part #:

BZX84C6V2W-TPMSTR-ND

Manufacturer Part#:

BZX84C6V2W-TP

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Micro Commercial Co
Short Description: DIODE ZENER 6.2V 200MW SOT323
More Detail: Zener Diode 6.2V 200mW ±6% Surface Mount SOT-323
DataSheet: BZX84C6V2W-TP datasheetBZX84C6V2W-TP Datasheet/PDF
Quantity: 3000
3000 +: $ 0.03804
6000 +: $ 0.03308
15000 +: $ 0.02812
30000 +: $ 0.02646
75000 +: $ 0.02481
Stock 3000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 6.2V
Tolerance: ±6%
Power - Max: 200mW
Impedance (Max) (Zzt): 10 Ohms
Current - Reverse Leakage @ Vr: 3µA @ 4V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Base Part Number: BZX84C6V2
Description

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A BZX84C6V2W-TP diode is considered to be a single Zener diode, which is part of the diode family. The main attribute of a single Zener diode is its ability to allow current to flow in one direction, while at the same time, it can also prevent the reverse current flow. It is also useful for protecting other components and for voltage clamping applications. Zener voltage ranges from 1.25 volts to 91 volts.

The BZX84C6V2W-TP diode has specific design elements that make it an ideal diode for a variety of applications. It has an operating junction temperature range from -65°C to +175°C and power dissipation up to 500 mW. It can be used in the following field applications:

  • Noise, harmonic and displacement generators
  • Voltage controlled oscillators
  • Software controlled oscillators
  • Radio Frequency Control
  • Photoelectric sensors
  • Gate drives
  • Active filters
  • Mixers

The working principle of the BZX84C6V2W-TP diode is based on its junction capacitance. When the diode is reverse biased, the minority carriers, or electrons, can reach the junction. The electrons accumulate and produce a race track effect which stores energy in the form of electric field. This electric field can create a reverse voltage which can increase the breakdown voltage of the diode. As a result, if the reverse voltage reaches a certain point, the voltage can cause the electrons to move much faster. This causes the flow of current. In this way, if the higher voltage is applied, a larger current flows.

The BZX84C6V2W-TP diode offers the ability to prevent reverse current. If a reverse voltage is applied beyond the rated Zener voltage, the diode operates in a reverse breakdown mechanism and current is limited regardless of the value of forward voltage. The power dissipation of the diode is kept to a minimum while the forward or reverse current is limited to a specified value. The breakdown voltage of the diode increases by increasing the applied current, as well as temperature.

The BZX84C6V2W-TP diode offers useful features, such as low leakage current, very fast responding time, and reliability. The diode is designed to work with a variety of circuits and in different fields of application.

The specific data is subject to PDF, and the above content is for reference

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