| Allicdata Part #: | BZX85B3V0-TAP-ND |
| Manufacturer Part#: |
BZX85B3V0-TAP |
| Price: | $ 0.04 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Semiconductor Diodes Division |
| Short Description: | DIODE ZENER 3V 1.3W DO41 |
| More Detail: | Zener Diode 3V 1.3W ±2% Through Hole DO-41 |
| DataSheet: | BZX85B3V0-TAP Datasheet/PDF |
| Quantity: | 1000 |
| 25000 +: | $ 0.03374 |
| Series: | Automotive, AEC-Q101 |
| Packaging: | Tape & Box (TB) |
| Part Status: | Active |
| Voltage - Zener (Nom) (Vz): | 3V |
| Tolerance: | ±2% |
| Power - Max: | 1.3W |
| Impedance (Max) (Zzt): | 20 Ohms |
| Current - Reverse Leakage @ Vr: | 100µA @ 1V |
| Operating Temperature: | -55°C ~ 175°C |
| Mounting Type: | Through Hole |
| Package / Case: | DO-204AL, DO-41, Axial |
| Supplier Device Package: | DO-41 |
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Diodes-Zener-Single is a category of electronic components which play a vital role in the circuit. It determines the functionality of a certain device or machine. The BZX85B3V0-TAP is one of the important components in this category and used in various applications.
The BZX85B3V0-TAP is a three-terminal Zener diode. It is commonly known as a power diode because it provides a unique feature that allows it to supply extra power to other components in the circuit. This terminal controls the power in the circuit and also protects it from possible overvoltage problems. This diode comes with a breakdown voltage of 3.3V, which means it can provide the extra power for components with a voltage lower than 3.3V.
The BZX85B3V0-TAP is typically used in consumer electronics such as laptops, smartphones, tablets, and TVs. It is also used in industrial machinery and medical devices. It can also be used in power supplies and voltage regulators. In these applications, the BZX85B3V0-TAP prevents overvoltage problems and provides additional power when needed. Apart from this, the device also ensures stable operation of the circuit even when subjected to varying temperature conditions.
The construction of the BZX85B3V0-TAP includes a zinc-oxide dielectric layer on which a thin layer of semi-conducting material is placed. A thin layer of metal is deposited on the semiconductor material which acts as the anode of the diode. On this layer, another layer of semiconducting material is placed and then covered by a layer of aluminum. This aluminum layer acts as the gate of the diode which is used for controlling the flow of current inside the device.
The working principle of the BZX85B3V0-TAP is simple. When the voltage across the anode and the gate is below the breakdown voltage of the diode, no current is allowed to pass through. On the other hand, when the voltage at the gate rises above the breakdown voltage, the diode turns into a low resistance path and allows the current flow to pass through it.
This particular diode has several features that make it suitable for various applications. It has a low reverse current leakage due to the zinc oxide dielectric layer which limits the current to a safe level. It also has a high reverse breakdown voltage which ensures that the device is protected from any overload or overvoltage problems. The device is also available in various packages, which allows for easy integration in existing circuits.
In conclusion, the BZX85B3V0-TAP is a crucial component in Diodes-Zener-Single category for its excellent operating characteristics. It is used in many consumer and industrial electronics applications, such as laptops, smartphones, tablets, and TVs. It is also used in power supplies and voltage regulators. It has a breakdown voltage of 3.3V and is capable of providing enough power for components with voltage lower than 3.3V. The device is available in various packages, which helps to make it a popular choice for various applications.
The specific data is subject to PDF, and the above content is for reference
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BZX85B3V0-TAP Datasheet/PDF