Allicdata Part #: | BZX85C22R0G-ND |
Manufacturer Part#: |
BZX85C22 R0G |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE ZENER 22V 1.3W DO204AL |
More Detail: | Zener Diode 22V 1.3W ±5% Through Hole DO-204AL (DO... |
DataSheet: | BZX85C22 R0G Datasheet/PDF |
Quantity: | 1000 |
20000 +: | $ 0.02609 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 22V |
Tolerance: | ±5% |
Power - Max: | 1.3W |
Impedance (Max) (Zzt): | 25 Ohms |
Current - Reverse Leakage @ Vr: | 500nA @ 16V |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 10mA |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-204AL (DO-41) |
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ArticleThe BZX85C22 R0G is a single Zener diode that is used in a variety of industrial and consumer applications. This type of diode is ideal for regulating DC voltage, overvoltage protection, and voltage-stabilizing circuits. The BZX85C22 R0G can withstand high reverse breakdown voltages and operates over a wide temperature range. It is especially useful for applications where ultra-low dynamic impedance is required, such as for protecting against voltage transients.
The semiconductor material used in the BZX85C22 R0G is a heavily doped p-n-p semiconductor junction. The p-n-p junction acts as a barrier that prevents the flow of electrons between the two sides of the diode. A depletion region forms around the junction, which is created by the diffusion of electrons across the barrier. This depletion region and the associated electric field form a diode structure, which allows current to flow through only one direction.
When forward biased, the current will flow through the Zener diode in the forward direction. When the device is reverse biased, the voltage across the diode will exceed the Zener breakdown voltage and the current through the diode will increase significantly. This sudden increase in current is called the Zener breakdown voltage or Zener breakdown current. At the Zener breakdown voltage, the diode is capable of dissipating large amounts of current and of providing good overvoltage protection.
In an application field such as voltage regulation, the voltage drop across the diode can be adjusted by the Zener breakdown voltage. By selecting the correct Zener breakdown voltage the desired voltage level can be achieved to a high degree of precision. The BZX85C22 R0G is ideal for such applications as its breakdown voltage is adjustable within a wide range. As such, it can be used to provide both overvoltage protection and voltage stabilizing circuits.
When used in transient protection applications, the BZX85C22 R0G offers ultra-low dynamic impedance. This eliminates the possibility of a large amount of current flowing through the device in the event of a voltage transient. This is why BZX85C22 R0G is an ideal choice for overvoltage protection and voltage stabilizing applications. Additionally, the device operates over a wide temperature range, making it suitable for a wide range of applications.
In conclusion, the BZX85C22 R0G is a single Zener diode that is used for a variety of industrial and consumer applications. Its heavily doped p-n-p semiconductor junction allows current to flow in only one direction. The Zener breakdown voltage allows the voltage drop across the diode to be adjusted precisely and provides good overvoltage protection. Additionally, its ultra-low dynamic impedance eliminates the possibility of a large current flow in the event of a transient. The device is suitable for a wide temperature range, making it ideal for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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