C602109175A06 Allicdata Electronics
Allicdata Part #:

BEL11027-ND

Manufacturer Part#:

C602109175A06

Price: $ 0.69
Product Category:

Uncategorized

Manufacturer: Belden Inc.
Short Description: 3600 PRE-TERM ASSY WHI 175FT
More Detail: Modular Cable
DataSheet: C602109175A06 datasheetC602109175A06 Datasheet/PDF
Quantity: 1000
1 +: $ 0.63000
Stock 1000Can Ship Immediately
$ 0.69
Specifications
Series: *
Part Status: Active
Description

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C602109175A06 (known as C602) is a type of N-channel enhancement mode power MOSFET transistor. This device is manufactured using advanced silicon gate CMOS technology, resulting in a high-density power MOSFET transistor with excellent performance and robustness. As such, this device is widely used for various DC/DC conversion, inverter, switching power supply and other power management applications. This article looks at the application fields and working principle of C602.

Application Field

C602 has a variety of applications due to its superior performance. This device is widely used in DC/DC converters, inverters, switching power supplies, and power controllers. In particular, its suitability for DC/DC converters makes it an excellent choice for notebook computers, networks, as well as medical and industrial equipment. It also finds use in automotive and telecommunication systems.

The device can also be used in AC/DC converters, low voltage motor drives, hot-swap controller circuits, and gate drivers. It is also suitable for a large variety of special applications such as audio amplifiers, HVAC systems, UPS, LED drivers, and UPS systems. Additionally, it is compatible with various gate drivers and PWM controllers. The high dielectric strength of the device makes it suitable for a variety of industrial and consumer applications.

Working Principle

The working principle of C602 derives from CMOS technology, which stands for Complementary Metal Oxide Semiconductor. As its name implies, this technology involves two separate semiconductor layers, the metal oxide and the complementary layer. The metal oxide layer acts as an insulator and the complementary layer as the semiconductor. When a small voltage is applied, charge carriers are attracted to the complementary layer, resulting in a current flow that switches on the device.

Basically, the C602 transistor functions as a switch between the gate of the device and the drain. When the gate of the device is activated by a low voltage, a current is created that flows between the drain and the source, creating an enhancement mode MOSFET. This current allows for switching to take place in the device, and for other DC/DC functions such as inversion and power management.

C602 is a low-capacitance, low threshold voltage MOSFET that is suitable for high efficiency power solutions. It is a high-density power MOSFET transistor with excellent performance and robustness. This makes it an ideal choice for a variety of DC/DC converter, inverter, and switching power supply applications.

Conclusion

C602 is a type of N-channel enhancement mode power MOSFET transistor that is manufactured using advanced CMOS technology. This device is suitable for a wide range of applications, including DC/DC converters, inverters, switching power supplies, and power controllers. Its low threshold voltage and high dielectric strength make it suitable for industrial and consumer applications. The working principle of C602 involves a two-layered semiconductor, an insulator and a semiconductor, which enables it to switch on when a small voltage is applied.

The specific data is subject to PDF, and the above content is for reference

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