
Allicdata Part #: | CA3101ER16-13S-ND |
Manufacturer Part#: |
CA3101ER16-13S |
Price: | $ 0.00 |
Product Category: | Uncategorized |
Manufacturer: | ITT Cannon, LLC |
Short Description: | ER 2C 2#12 SKT RECP LINE |
More Detail: | N/A |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | * |
Part Status: | Active |
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CA3101ER16-13S is a type of semi-insulating gallium arsenide field effect transistor (GaAS FET). It is mainly used in the field of communications, power control, and switching devices. The main applications are cellular phones, hand-held radio transceivers, data communications, semiconductor manufacturing equipment, computers, medical equipment, and security systems. Its working principle is based on the electrical field generated within the GaAs crystal lattice by the gate potential.
The CA3101ER16-13S is a dual gate field effect transistor that is operated in a depletion mode and uses n-type GaAs as the main active region. It has a high on/off current output ratio and low gate capacitance. Its dual gate structure allows for control of the current and voltage at the source and drain and makes it suitable for use in various switching circuits. Additionally, the high output impedance of the GaAs semiconductor makes it ideal for use in high frequency transmitters.
The principles underlying the operation of the CA3101ER16-13S are similar to those of a silicon-based D-mode FET. When a positive gate potential is applied to the gate, the electrons in the n-type GaAs material will be attracted towards the gate and a depletion region will be formed within the semiconductor material, increasing the resistance between the source and the drain. This will reduce the current flowing through the device, allowing it to function as a switch or amplifier. On the other hand, when a negative gate potential is applied to the gate, the electrons in the n-type GaAs will be repelled from the gate and the depletion region will be decreased, allowing the current flow through the device to increase.
One key feature of the CA3101ER16-13S is its wide temperature range. It is designed to operate at temperatures from -40°C to +105°C, and its performance is stable over this range. Its low power consumption and high reliability make it an ideal choice for use in any application where temperature control is necessary. It is also well suited for use in both analog and digital applications.
The CA3101ER16-13S is commonly used in communications, power control and switching applications. It is used in cellular phones, hand-held radio transceivers, data communications, semiconductor manufacturing equipment, computers, medical equipment, and security systems. It is also used in instrumentation and industrial control systems, and in power electronics applications such as motor control, power supply design, and motor drivers. Additionally, its high output impedance makes it suitable for use in high frequency transmitters.
The CA3101ER16-13S can be used in both linear and switching circuits. In linear circuits, it functions as an amplifier, while in switching circuits it is used to control power and voltage levels. In both cases, its wide temperature range, low power consumption, and high reliability make it an ideal choice. Furthermore, its dual gate structure allows for better control over current and voltage levels, resulting in improved performance.
To summarize, the CA3101ER16-13S is a type of semi-insulating gallium arsenide FET, which is mainly used in the telecommunications, power control, and switching markets. Its dual gate structure allows for better control over current and voltage levels, while its high output impedance makes it suitable for use in high frequency transmitters. Additionally, the device has a wide temperature range and low power consumption, making it an ideal choice for any application where temperature control is necessary. It can be used in both linear and switching circuits, and its performance is stable over its operating range.
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CA3100E16S-8SXBF80F85G5-05 | ITT Cannon, ... | 39.98 $ | 69 | CB 5C 5#16S SKT RECP WALL |
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