CAF1208020 Allicdata Electronics
Allicdata Part #:

BEL29504-ND

Manufacturer Part#:

CAF1208020

Price: $ 23.35
Product Category:

Uncategorized

Manufacturer: Belden Inc.
Short Description: T568A-OPEN B10GXF CMR GRY 20F
More Detail: Modular Cable
DataSheet: CAF1208020 datasheetCAF1208020 Datasheet/PDF
Quantity: 1000
1 +: $ 21.21840
Stock 1000Can Ship Immediately
$ 23.35
Specifications
Series: *
Part Status: Active
Description

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CAF1208020 is an integrated field-effect transistor (FET) with ground-referenced source (GRS) technology used in a wide variety of output driver applications. It is a type of semiconductor device that uses a voltage to control current flow. Its operation relies on the principle of the electric field between the gate and drain (GND) of the FET, which modulates the conductance of the channel between the source and drain. In short, it can convert a small control voltage at the gate to a large output voltage at the source.

CAF1208020 is used in a variety of output driver applications, including industrial computers, communications equipment, and consumer electronics. It can be used to efficiently drive high power loads and is well-suited for high-speed switching, high-temperature operation, and low power consumption. It is also widely used in switching applications such as motor control, dc-to-ac power conversion, power amplifiers, and motor control. Additionally, it can be found in battery packs, data converters, microwave circuits, waveform generators, power switches, and power supplies.

CAF1208020 has an operating voltage range between 2.8 and 1000 volts. It can handle up to 25 A continuous and 80 A peak. It has an on-state drain-source resistance of 0.29 Ohms and an off-state drain-source resistance of 20 MOhm. The maximum on-state dissipation is 140 watts at 25°C and minimum off-state leakage current is 0.02 A. It also has a maximum power derating of 14.5 °C/W.

The working principle of CAF1208020 is based on the modulation of current flow in the FETs channel by the electric field between the gate and the drain (GND). When a voltage is applied to the gate, the electric field induces a shift in the FETs threshold voltage, which in turn modulates the conductivity of the current flowing between the source and the drain. The change in the on-state resistance of the device between the source and the drain is used to control current, as well as to amplify signals.

CAF1208020 is well suited for use in variety of power conversion and switching applications, due to its wide operating voltage range, high current-carrying capacity, and low on-state resistance. It is also suitable for use in high temperature and high-speed switching applications, as well as for low power consumption. It is a very versatile device and is increasingly being used in a wide range of commercial and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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