CAT28C64BX-12T

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The CAT28C64BX-12T is an 8 bit CMOS EEPROM series developed by Catalyst Semiconductor that offers a high level of performance. It is an ideal solution for applications requiring ultra-high speed access to external memory. This series features an advanced memory array with an on-die memory controller to provide up to 12 MBps of store and retrieve speeds. The device has an architecture that supports both asynchronous and synchronous data transfers. It is also equipped with an on-chip SRAM for temporary storage.

The term EEPROM stands for Electrically-Erasable Programmable Read Only Memory. It is a type of non-volatile memory that can be electrically erased and re-programmed. The CAT28C64BX-12T is a high-density EEPROM memory device that offers a cost-effective, low power solution for applications requiring high-speed data storage, such as system and application firmware. Additionally, the device is designed to be used in high-density, distributed data storage networks.

The CAT28C64BX-12T utilizes a fast parallel input/output (I/O) interface and a wide operating voltage range of 4.5V to 5.5V. In addition to its fast speed capabilities, the device also offers low power consumption due to its 65ns cycle time. Other features include random access mode, page-mode access, and sector-mode access. The device also supports hardware and software data protection, a multiple-bit programming capability, three-state outputs, and an auto-write capability. The device is available in space-saving 8-pin and 16-pin SOIC packages.

As a memory device, the CAT28C64BX-12T can be used in a variety of applications such as programmable logic controllers, industrial control systems, embedded systems, medical and automotive systems, instrumentation and laboratory equipment, and real-time embedded system applications. It can be used as a nonvolatile memory for code and data storage in applications where a high speed and reliability are required. It can also be used as a memory expansion module for systems with low memory capacity. The device offers a robust design with high endurance and reliability.

The working principle of the CAT28C64BX-12T involves the use of an internal memory array that is composed of millions of individual memory cells. Each of these cells is made up of a fixed number of electrons stored in an insulated gate FET (MOSFET). These electrons are used to store and hold information. The memory array can be divided into multiple sectors, each of which consists of many memory pages. When a user want to store information, they can access the specific memory array using a memory controller and write their data into the desired sector. To retrieve information, the user can again use the memory controller to access the data stored in the sector.

The memory array is connected to the CPU and other components through the I/O interface. This allows the device to transfer data to and from other system components. The external I/O pins provide the necessary interface circuitry to allow for external connections and communication with other components. The controller also includes an address decoder circuitry to support the addressing of the memory array. The memory device also includes a number of protection mechanisms that prevent accidental or unauthorized alteration of the data stored on the device.

In conclusion, the CAT28C64BX-12T is an 8-bit CMOS EEPROM series offered by Catalyst Semiconductor. It is an ideal solution for applications requiring ultra-high speed access to external memory and can be used in a variety of applications such as programmable logic controllers, embedded systems, and medical and automotive systems. The device utilizes a fast parallel I/O interface and a wide operating voltage range of 4.5V to 5.5V and also offers low power consumption due to its 65ns cycle time. The working principle of the CAT28C64BX-12T involves the use of an internal memory array that is composed of millions of individual memory cells and is connected to the CPU and other components through an I/O interface.

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