CD214A-FS1400

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Last Time Buy
Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	400V
Current - Average Rectified (Io):	1A
Voltage - Forward (Vf) (Max) @ If:	1.25V @ 1A
Speed:	Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr):	25ns
Current - Reverse Leakage @ Vr:	5µA @ 400V
Capacitance @ Vr, F:	10pF @ 4V, 1MHz
Mounting Type:	Surface Mount
Package / Case:	DO-214AC, SMA
Supplier Device Package:	DO-214AC (SMA)
Operating Temperature - Junction:	-55°C ~ 150°C

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The CD214A-FS1400 is an N-Channel Enhance Mode Field Effect Transistor (FET). Commonly referred to as a type of mosfet, this device is capable of providing up to 28 amps of continuous drain current (for the FS1400DPA variant). Due to its relatively low on-resistance (RDS(on)) of 4.5Ohms, and relatively high voltage withstand (VDSS) of 40V, it is extremely well suited for compact, power efficient applications.However, its popularity among users does not come from its robust electrical characteristics, and instead from the wide range of applications it can be used for.The CD214A-FS1400 is a perfect fit for demanding motor control and power conversion applications, as its low RDS(on) allows it to be used in synchronous buck applications, while its high accuracy and speed, via its very-low gate charge and fast switching speeds, allow it to avoid phase discontinuities, making it the ideal choice for high performance applications.Beyond this, the CD214A-FS1400 is also found in advanced LED lighting, from high-powered LED lighting to LED lighting for interior and exterior decorative lighting applications. Thanks to its ability to withstand high temperatures, and sustain stable performance over a long period of time, it is also used in solar energy and automotive applications.These applications are made possible by the FS1400’s working principle. At its core, the CD214A-FS1400 is a current-controlled, or depletion mode FET. This means that when a voltage is applied at the gate, electrons flow through the source-drain channel, given that the source-drain voltage (VDS) is greater than the gate-source voltage (VGS). The VDS can range from 0V to the highest voltage, so at the 0V gate threshold, when no voltage is applied to the gate, no current can flow through the source-drain channel. When the gate voltage is brought above this threshold, the voltage-dependent resistance level , or RDS(on), of the device goes lower. This makes the device a great choice for power conversion applications, since it allows users to precisely control the amount of current (and thus, power output) flowing through the device.The FS1400DPA variant of the CD214A-FS1400 also has a very low gate charge. This low gate charge means that the device does not require a large amount of voltage to reach its steady-state operating point. This feature is useful for devices that require frequent or rapid changes in current output, such as during a switching/conversion cycle.In conclusion, the FS1400DPA variant of the CD214A-FS1400 is an N-Channel Enhance Mode Field Effect Transistor (FET). It is widely used in motor control, power conversion, LED lighting, solar energy, and automotive applications due to its low on-resistance (RDS(on)), high voltage withstand (VDSS), and low gate charge. By the application of a voltage at the gate, the device allows for precise control of the current (and power output) flowing through the source-drain channel. With its broad range of applications, low power consumption, and excellent performance, the CD214A-FS1400 makes the perfect choice for any power conversion application.

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