CD214A-T33ALF Allicdata Electronics
Allicdata Part #:

CD214A-T33ALF-ND

Manufacturer Part#:

CD214A-T33ALF

Price: $ 0.08
Product Category:

Circuit Protection

Manufacturer: Bourns Inc.
Short Description: TVS DIODE 33V 53.3V SMA
More Detail: N/A
DataSheet: CD214A-T33ALF datasheetCD214A-T33ALF Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
10000 +: $ 0.06715
Stock 1000Can Ship Immediately
$ 0.08
Specifications
Voltage - Clamping (Max) @ Ipp: 53.3V
Supplier Device Package: SMA (DO-214AC)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 7.5A
Series: --
Voltage - Breakdown (Min): 36.7V
Voltage - Reverse Standoff (Typ): 33V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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TVS - Diodes are devices used to protect electric and electronic components from electrostatic damage. They serve as a protective barrier against transient voltage and high voltage surges and protect against electrostatic discharge damage. They are used in all types of equipment and systems, including medical, industrial, automotive, military and defense. CD214A-T33ALF is one type of TVS diodes, which has a wide range of applications and is widely used in these industries.

CD214A-T33ALF is an axial-leaded bidirectional transient voltage suppressor diode in the small outline integrated circuit (SOIC) package. It is designed for a wide range of applications where high reliability and protection from transients is required. The diode has an operating temperature range of -55°C to 150°C, and is suitable for use in consumer, automotive, medical, and industrial applications.

The diode is made up of an avalanche breakdown element, which is surrounded by a charge storage area and a dielectric area. The avalanche breakdown element is composed of a semiconductor material, specifically, silicon. This material is responsible for allowing the electrons to move freely when a voltage is applied. The avalanche breakdown element also absorbs the energy of the transient voltage. The charge storage area is composed of two metal layers, which act as capacitors in the device. These layers are responsible for absorbing the transient energy and dissipating it into the dielectric area.

The dielectric area consists of a range of materials that act as an electrical breakdown barrier. Its purpose is to dissipate the large amount of heat that is generated when the transients occur. The dielectric area also serves to protect the device from moisture, dust, and other external influences. The device is rated for a maximum voltage of 53V and a maximum pulse current of 17A.

The working principle of CD214A-T33ALF is based on the avalanche breakdown mechanism. When the device is exposed to a voltage exceeding its breakdown voltage, the electrons in the avalanche breakdown element are released, creating an avalanche breakdown. This avalanche breakdown is responsible for absorbing the energy of the transient voltage, thus protecting the device from damage.

In conclusion, CD214A-T33ALF is a TVS diode used to protect electric and electronic components from electrostatic damage. It is designed to absorb the energy of transient voltages and dissipate the heat generated from its breakdown. The device is suitable for use in a wide range of applications, including consumer, automotive, medical, and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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