CD5EC330JO3F

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Mica and PTFE capacitors offer a wide range of capabilities including high-temperature and harsh environment operation which make them ideal for applications where electrical and environmental requirements are paramount. The CD5EC330JO3F is a PTFE-based capacitor with a nominal value of 33 pF (± 5%). It is capable of handling high-frequency currents and is suitable for a variety of uses such as EMI/RFI suppression, bypassing, RF matching and resonant applications.

The key features of the CD5EC330JO3F are its wide capacitance range, high voltage tolerance, and low parasitic components. The capacitor has a capacitance range of 33pF to 40pF and is capable of handling up to 1,000V DC capability, making it suitable for a variety of applications under tough conditions. The capacitor has also been designed to provide high signal integrity, with low dielectric absorption and flat impedance characteristics.

The way the CD5EC330JO3F works is fairly simple. The PTFE film provides a high dielectric constant with low loss and also provides mechanical strength, while the mica provides electrical insulation and excellent thermal stability. When the capacitor is subjected to an AC voltage, the dielectric material will be compressed between the two plates which will increase the capacitance. The capacitance will remain relatively constant under variable frequency and temperature conditions due to the low loss characteristics of the PTFE. The capacitor also has low intrinsic inductance, providing a good impedance match at high frequencies.

The CD5EC330JO3F is an ideal choice for RF circuits and EMI/RFI suppression due to its capability to handle high voltage and its excellent electrical characteristics. It is also suitable for high-frequency bypass and matching applications, allowing for precise tuning of resonant circuits. The capacitor can also be used as an ESD protection element, providing protection against electric shocks from static electricity.

The CD5EC330JO3F is a reliable and cost-effective capacitor that can be used in a variety of applications due to its high voltage and high-temperature tolerance. It is ideal for RF and high-frequency applications in harsh environments, providing excellent electrical characteristics and mechanical strength. The device is also designed to provide low dielectric absorption and good impedance characteristics, providing good signal integrity in spite of variable frequency and temperature conditions.

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