CEN-U95

Bipolar junction transistors (BJTs) are an important part of a broad range of electronic circuits, including complementary metal-oxide-semiconductor (CMOS) and mixed-signal integrated circuits (ICs). As the transistor has become ubiquitous, it is important to understand how BJTs work and what their application fields are. This article focuses on BJTs specifically and will discuss CEN-U95 transistors and their application field and working principle.

The CEN-U95 is a high-power BJT transistor with a maximum current rating of 960A and a maximum power handling of 25W. It is also rated for a maximum collector-emitter voltage of 100V, making it suitable for a variety of different applications. It has a medium to high frequency performance, with a frequency range up to about 100MHz.

The CEN-U95 has a relatively low input impedance of approximately 43 kiloohms when operated at the optimum collector current rating. This makes it well-suited for use as an amplifier in low-voltage switch-mode power supplies and in other applications where low input impedance is required. Its reverse transfer characteristics also make it a suitable choice for use in high-performance voltage regulator modules.

The CEN-U95 is capable of sustaining large collector currents up to roughly 700mA, which makes it ideal for use in high-current valve amplifier stages. Its relatively low voltage cut-off makes it a suitable choice for use in low-voltage control circuits like logic level and logic level switching circuits. It is also a popular choice for use in gate drives for many types of power semiconductor devices.

The operation of a BJT depends on the interaction of three regions, namely the emitter, base, and collector. Each bipolar junction transistor has a P-N-P or N-P-N structure, depending on its type. The electrons in the N-type emitter region are attracted towards the P-type base region, while the holes in the P-type base are attracted towards the N-type collector. This creates an electric field in the base region, where the electrons and holes pass through.

The electric field created in the base helps to control the flow of current between the emitter and the collector. When a positive voltage is applied to the base region, the electrons in the emitter are pulled towards the base and the holes in the base are pulled towards the collector, resulting in an increase in the current between the emitter and collector. Conversely, when a negative voltage is applied to the base region, the current between the emitter and collector decreases.

The CEN-U95 is capable of operating at very high frequencies due to its low junction capacitance. This makes the transistor ideal for use in frequency control circuits and switching applications. Its low input impedance also makes it a suitable choice for use in amplifier and mixer circuits.

In conclusion, the CEN-U95 is a high-power BJT transistor with a wide range of applications including in low-voltage power supplies and switching circuits as well as in amplifiers and frequency control circuits. It is capable of withstanding large collector currents and is rated for a maximum voltage of 100V. Understanding its operation and application field can help to guide the selection and application of the CEN-U95, enabling engineers to make the best possible use of this powerful transistor.