CG2176X3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

CG2176X3 RF switches are semiconductor-based devices used to route radio frequency (RF) signals from one port to another. These devices are usually found in electronic systems such as cellular transmissions, satellite communications, radio transceivers, medical imaging, and military equipment.

RF switches are typically fabricated from gallium arsenide, silicon, and/or indium gallium phosphide. In addition to electrical switching, they may also integrate many other functions, such as amplification, control, attenuation, phase shifting, and signal manipulation. RF switches are used for a variety of applications, including switching power amplifiers, frequency control, antenna selection, and signal transmission.

The CG2176X3 is a low power single-pole-double-throw (SPDT) RF switch designed for use in cellular and ubiquitous communication systems. It features fail-short, fail-open, and low-profile design characteristics. In addition, it has superior broadband characteristics at low insertion loss, higher return loss, and faster switching. Its low on-chip capacitance ensures optimal linearity and uniformity across the frequency range. Protection circuits provide ESD and surge protection. This device is suitable for both cellular and 3G systems.

The CG2176X3 is a simple and cost-effective RF switch with a wide range of uses. It is used in both cellular and pervasive communication systems, providing multiplexing and switching of signals. It is also frequently found in commercial and military electronics, enabling fast and reliable signal routing and power amplification. In addition, its low-power capabilities allow it to be used for wireless personal communication systems (PCSs), LANs, and other types of wireless networks.

The working principle of the CG2176X3 is based on the thermoelectric effect. By applying an electric current through a thin metal film, a temperature gradient is created across the film and either a thermal gradient or a thermal shock is created depending on the design. This in turn controls the amount of friction created between the contacts which allows the switch to be opened or closed when the predetermined current or voltage is applied. This makes it possible to use the switch in environments that require a high speed of switching with precision.

With its high-performance, high-reliability and low-power characteristics, the CG2176X3 is an ideal choice for RF switching. Its low-profile design and high insertion loss and return loss make it suitable for a wide variety of applications including cellular and 3G, commercial and military electronics, LANs and PCSs. In addition, its thermoelectric-based control ensures precise and fast switching and it is highly resistant to ESD and surge protection. All of these advantages make the CG2176X3 an excellent choice for RF switching requirements.

The specific data is subject to PDF, and the above content is for reference