Allicdata Part #: | CG8223AAT-ND |
Manufacturer Part#: |
CG8223AAT |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC SRAM 4MB FAST |
More Detail: | Memory IC |
DataSheet: | CG8223AAT Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | * |
Part Status: | Discontinued at Digi-Key |
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The CG8223AAT belongs to the memory family and is used for a wide range of applications. It is an economical, fast, energy-efficient, low-power and robust solution for high-density storage requirements. Its low power consumption makes it ideal for consumer electronics, embedded systems and industrial applications.
CG8223AAT memory consists of nonvolatile memory elements or cells and is divided into three main categories of Flash, EEPROM and ROM. Flash and EEPROM provide read/write access to the stored data, while ROM provides read-only access to the stored data. The memory cells can be arranged in either single-level or multi-level cells as per the application needs.
CG8223AAT is an embedded Flash memory device that is designed to execute code in an efficient and cost-effective way. It is designed to support an instruction set and contains internal storage elements that can be used for both program and data storage. The device offers fast access times, increased density and data integrity over the lifetime of the product, and is ideal for emerging applications such as automotive, industrial and consumer electronics.
The working principle of CG8223AAT is based on the same principles as other Flash memory devices. Flash memory uses a semiconductor device made up of cells arranged in a grid of columns and rows. Each cell is composed of a floating gate and two transistors, one for controlling the flow of electrons into the floating gate and another for controlling the flow of electrons from the floating gate.
To write data to the memory, the gate of each cell is charged to the appropriate level so that a given bit of data is written in. Erasing a cell is also accomplished by applying a voltage to the cell, which will cause the electrons to be removed from the floating gate and the default \'1\' or \'0\' state is restored.
CG8223AAT also contains several additional features such as error correction, power-loss protection and wear-leveling to ensure data accuracy and integrity. The memory can be programmed and erased in blocks, and the controller can be used to manage the programming and erasing of individual cells. This makes it easier to customize the memory for specific applications.
Overall, CG8223AAT is a reliable and high-performance solution for a wide range of memory applications. It is ideal for applications requiring high density, low power consumption and robust data protection. Its fast access times and error correction make it suited for embedded systems and consumer electronics. Its low cost makes it attractive for products with limited budgets, and its flexibility makes it easy to customize for specific applications.
The specific data is subject to PDF, and the above content is for reference
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