Allicdata Part #: | CHIPT0110L3E6762SX2XA1-ND |
Manufacturer Part#: |
CHIPT0110L3E6762SX2XA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | CHIP T0110L-3 E6762 DIE |
More Detail: | Bipolar (BJT) Transistor |
DataSheet: | CHIPT0110L3E6762SX2XA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | * |
Part Status: | Last Time Buy |
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CHIPT0110L3E6762SX2XA1 Transistor is a single bipolar junction transistor that is categorised as a “Voltage Regulator Transistor”, used for voltage regulator and current limiter. It is a small, low-cost transistor that can operate at very high speeds and provides a wide range of functionalities.
The CHIPT0110L3E6762SX2XA1 is a Bipolar Junction Transistor (BJT) from the NPN family. Its unique feature arises from the fact that it is a single device, meaning it only needs one power supply for it to run. It is an excellent choice for transistor circuits and has many different applications, such as voltage regulation and current limiting. It is also ideal for switched-mode power supplies, as it can open and close quickly and effectively and with minimal power loss.
The CHIPT0110L3E6762SX2XA1 can operate at high current densities, allowing it to dissipate more heat and it can also suffer less loss of current, making it reliable and effective. It has a high maximum voltage of 1.6 V and a maximum power dissipation of 200 mW. Moreover, it has a maximum collector-base voltage of 1.0 V and a maximum collector-emittor voltage of 2.5 V. It also features a high-frequency current gain of 20-200. due to its above-average performance, it is suitable for applications like switching regulators, driver devices, RF amplifiers, and high-speed transistors.
The CHIPT0110L3E6762SX2XA1 can operate at temperatures ranging from -65 to +150 degrees Celsius and its storage temperature range is -55 to +150 degrees Celsius. Its package size is 2.54 mm and it has an efficient thermal coefficient of -0.037. It has a high switching speed of 1 MHz, allowing it to operate quickly and effectively. In addition, it has an extremely low leakage current, making it one of the most efficient transistors on the market.
The CHIPT0110L3E6762SX2XA1 works by controlling the current flow in a circuit. It uses a flow of charged carriers to do this. When a small amount of current is sent through the base-emitter junction of the transistor, the current is amplified and can then flow through the collector-emitter, allowing the transistor to act as an amplifier or switch. This, in turn, can open and close switches, allowing devices to draw current from the power supply.
In conclusion, the CHIPT0110L3E6762SX2XA1 is an excellent choice for a variety of applications due to its low operating temperature, high frequency current gain, small package size, and low leakage current. It can draw current from the power supply quickly and efficiently, due to its high-frequency current gain and high-power dissipation. As a result, it is a great choice for various voltage regulation and current limiting applications.
The specific data is subject to PDF, and the above content is for reference
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