CLT3-4BT6-TR Allicdata Electronics
Allicdata Part #:

497-2455-2-ND

Manufacturer Part#:

CLT3-4BT6-TR

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: STMicroelectronics
Short Description: TERMINATION QUAD DGTL TSSOP-20
More Detail: N/A
DataSheet: CLT3-4BT6-TR datasheetCLT3-4BT6-TR Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Stock 1000Can Ship Immediately
Specifications
Series: CLT
Packaging: Tape & Reel (TR) 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
Voltage - Clamping: --
Technology: Mixed Technology
Number of Circuits: 4
Applications: General Purpose
Mounting Type: Surface Mount
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 20-TSSOP
Description

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Mixed technology encompases the advances of both Thermally Protected Varistors (TVS) and Silicon Breakdown Transistors (SBT). The CLT3-4BT6-TR is a perfect product to illustrate this combination of circuit protection and thermal protection.

A TVS is an electronic device that is designed to protect against electrical overstress (EOS), the term used to refer to conditions that can cause electro-mechanical failure in a circuit. It works by clamping voltages to a safe level when they exceed the protection level of the circuit. To be effective, the TVS must remain in a conductive state when the voltage reaches or exceeds its protection level, which is determined by the circuit design.

The silicon breakdown transistor (SBT) is a sub-class of BJT transistors designed to provide protections against high voltages and high currents. In essence, it is a bipolar junction transistor (BJT) that is specially designed to withstand high voltage transients. It works by providing a path for current flow to the collector (positive) terminal, while the emitter (negative) terminal is kept isolated from the power supply. The gain of the transistor is determined by the voltage between the collector and base, and is typically higher than a conventional BJT transistor.

The CLT3-4BT6-TR is an integrated circuit combining both TVS and SBT technologies. It is designed to protect against EOS and high current transients in a variety of different applications. It features an integrated thermal protection system, allowing for greater protection than can be achieved with a standard TVS. The thermal protection system works by creating a thermal resistance between the devices, keeping the device cool during operation. The protection system also includes a protective shield, which helps reduce the effect of higher transient voltages and currents.

The CLT3-4BT6-TR provides protection against both EOS and high current transients in a variety of applications, including lighting systems, industrial electronic equipment, and automotive applications. It is capable of operating in temperatures ranging from –40 to +85 °C and has a wide range of available output power levels. It is also UL recognized, making it suitable for use in the United States.

The CLT3-4BT6-TR is an excellent example of the increasing use of mixed technologies, such as combining a TVS and SBT, in order to provide enhanced protection from electrical overstress and high current transients. By utilizing both technologies, the device is able to provide robust protection in a variety of different applications, while also helping to reduce the size and power requirements of the circuit.

The specific data is subject to PDF, and the above content is for reference

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