CM100TX-24S1 Allicdata Electronics
Allicdata Part #:

835-1148-ND

Manufacturer Part#:

CM100TX-24S1

Price: $ 86.65
Product Category:

Discrete Semiconductor Products

Manufacturer: Powerex Inc.
Short Description: IGBT MOD NX 100A 1200V 6-PAC
More Detail: IGBT Module Three Level Inverter 1200V 100A 625W ...
DataSheet: CM100TX-24S1 datasheetCM100TX-24S1 Datasheet/PDF
Quantity: 16
1 +: $ 78.76890
10 +: $ 73.62320
Stock 16Can Ship Immediately
$ 86.65
Specifications
Series: --
Part Status: Discontinued at Digi-Key
IGBT Type: --
Configuration: Three Level Inverter
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 100A
Power - Max: 625W
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 100A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 10nF @ 10V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C (TJ)
Package / Case: Module
Supplier Device Package: Module
Description

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Introduction

CM100TX-24S1 is a power module, which belongs to the classification of transistors, IGBTs, and modules. It is a single-channel gate drive module, containing one IGBT transistor and one free-wheel rectifier IGBT. This power module, in particular, is used to drive the IGBT for either low-power applications such as inductive loads, or as a higher power switch for automotive and motor control applications.

Application Field

The CM100TX-24S1 can be used as a fast switching power device in a wide variety of low power applications. Such applications include brushless DC motor control, switching power supplies, and power control in car electronics, home appliances, and other AC or DC motor control applications. Moreover, with its high current rating, the CM100TX-24S1 can be used as a high-power switch for motor control applications, such as automotive engine control, robotic motion control, and variable speed drives.

Working Principle

The CM100TX-24S1 works on the principle of insulated-gate bipolar transistor (IGBT), which is a type of transistor consisting of a metal-oxide semiconductor field-effect transistor (MOSFET) and a bipolar junction transistor (BJT), combined together. This combination gives a semiconductor device with both the insulated-gate control of a MOSFET, and the high voltage capabilities of a BJT.

The two transistors within the CM100TX-24S1 module interact with one another to create a fast switching rate, with a minimum ON-state voltage drop, resulting in high-speed switching and lower loss of power when switching loads. The IGBT provides the switching, with the free-wheel rectifier IGBT provides the gate drive and reverse recovery control.

The built-in fast snubber circuit acts as a reverse recovery circuit, protecting the gate drive against overcurrent and overvoltage conditions. This ensures that the CM100TX-24S1 can switch loads quickly and reliably in a wide range of applications, including power electronics and industrial automation.

Conclusion

The CM100TX-24S1 is an IGBT module suitable for a wide range of low-power to high-power applications, due to its high switching speed and low-current drop. With the free-wheel rectifier IGBT for gate drive, the CM100TX-24S1 provides fast switching and can be used in motor-control applications, such as automotive engine control, robotic motion control, and variable speed drives.

The specific data is subject to PDF, and the above content is for reference

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