CM200EXS-34SA

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CM200EXS-34SA Application Field and Working Principle

CM200EXS-34SA, or CM200EXS-34SA Wide Band Gap Modules, are the latest development in advanced transistor technology. An IGBT (Insulated-Gate Bipolar Transistor) is a type of power semiconductor device which utilizes both bipolar transistor and field-effect transistor technology. These type of devices provide high efficiency, high power density, high frequency, and low power consumption, when compared to other types of transistors.

The CM200EXS-34SA is a 3300V half bridge module with a 20A maximum current rating. The switching frequency of the CM200EXS-34SA is up to 20kHz. This device uses a Fieldstop structure for improved reliability and offers a fast switching speed even in light-load conditions which helps to avoid damage from thermal shock. Additional features of the CM200EXS-34SA include extended temperature ranges, low EMI noise, and low power consumption.

The device is suitable for a variety of applications, such as motor drives, servo systems, UPS, welding machines, and many others. It can be connected to DC power sources ranging from 24V to 400V, and its maximum DC link capacitance is 150nF. The device has a low power loss and high power density, making it suitable for high power density systems.

When it comes to working principle of the CM200EXS-34SA, it is based on the concept of a BJT (bipolar junction transistor) with the addition of a FET (field-effect transistor). The BJT acts as an on/off switch, while the FET provides a variable resistance to allow for better switching performance. The FET also provides additional reverse bias protection for the BJT. The IGBT combines the benefits of both BJT and FET, allowing for higher performance, higher power density, and lower cost than either a BJT or FET alone.

In conclusion, the CM200EXS-34SA Wide Band Gap Module provides high efficiency, high power density, and low power consumption. It is suitable for a variety of applications, including motor drives, servo systems, UPS, and welding machines. The working principle of the device is based on a combination of BJT and FET technology, and provides good performance, higher power density, and cost efficiency.

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