CM300E3U-12H

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The CM300E3U-12H is a module from the transistor family that is specifically categorised as an Insulated Gate Bipolar Transistor (IGBT). It is a pulse-operated three-phase module that is tailored for low-frequency applications such as motor drives, power converters, welding machines, and solar inverters. This IGBT module operates in the high-power range, allowing for high-efficiency power conversion for a wide range of industrial uses.

The module is packaged in a standard 600 kW bottom-mounting case and includes gate-source, gate-drain, and collector-emitter die and gate flip-chip solder joints on a gold-plated AlSn substrate. This module has an operating voltage of 600 volts, a junction temperature of - 40°C to +150°C, a collector-to-emitter breakdown voltage of 600 volts, a maximum isolation voltage of 2500 volts, and an isolation resistance of 1000 mega ohms. Its current rating exceeds 450A, operating frequency up to 20Hz, and a maximum power dissipation of 12kW.

The CM300E3U-12H IGBT module is capable of handling high-power and high-frequency applications, which makes it ideal for motor drives and other power conversion applications. It also has a robust thermal design that helps reduce thermal stress and improve reliability during high-power operation. The module also features high-efficiency switching, allowing for energy savings and noise reduction for various industrial applications.

The CM300E3U-12H’s working principle is based on the hysteresis characteristics of the IGBT. The module contains a bipolar transistor and a gate driver along with a snubbing diode. The bipolar transistor controls current flow in the collector-emitter path and the snubbing diode provides switch protection. The gate driver supplies the IGBT with gate-source and gate-drain voltages, while the IGBT operates in either a full on or full off state.

The module’s switching characteristics are determined by its gate-emitter voltage. When the gate-emitter voltage exceeds the gate threshold voltage, the module switches to a full-on state, allowing collector-emitter current to flow. Conversely, when the gate-emitter voltage falls below the gate threshold voltage, the module switches off, and collector-emitter current does not flow.

In addition, the CM300E3U-12H IGBT module also features parallel-connected switching cells, allowing for high-power capabilities and a low power dissipation. The cells also feature a reinforced integrated circuit with a low-power dissipation, which increases the lifetime of the module and reduces power consumption.

Overall, the CM300E3U-12H IGBT module is a high-power module ideal for low-frequency applications, including motor drives and power converters. It is well-suited for these applications due to its high-efficient switching, robust thermal design, and reinforced integrated circuit. This module showcases the powerful performance of Insulated Gate Bipolar Transistors, making it a great choice for industrial uses.

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