Allicdata Part #: | CM35MXA-24S-ND |
Manufacturer Part#: |
CM35MXA-24S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Powerex Inc. |
Short Description: | IGBT MODULE CIB 35A 1200V |
More Detail: | IGBT Module Three Phase Inverter with Brake 1200V... |
DataSheet: | CM35MXA-24S Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Discontinued at Digi-Key |
IGBT Type: | -- |
Configuration: | Three Phase Inverter with Brake |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 35A |
Power - Max: | 355W |
Vce(on) (Max) @ Vge, Ic: | 2.25V @ 15V, 35A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 3.5nF @ 10V |
Input: | Three Phase Bridge Rectifier |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | Module |
Supplier Device Package: | Module |
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CM35MXA-24S is a type of insulated gate bipolar transistor module. Designed to take up minimal space in a variety of applications, these devices feature low saturation voltage and low loss, allowing them to be used in a wide range of applications. These devices are made of silicon material, which is perfect for high temperature applications and can be used at frequencies up to 110kHz.
Insulated gate bipolar transistors (IGBTs) are semiconductor devices that operate similar to transistors, but are used for special purposes. They use both n-type and p-type semiconductors, allowing them to act as a switch and also as an amplifier. Due to their construction, IGBTs have lower on-state voltage drops and higher current capabilities, allowing them to be used in high-power applications.
The CM35MXA-24S module is made of 240 x 80 mm2 base plate and can be mounted with DCB Pb-free plastic mold according to UL 94V-0 flame retardant grade, making it perfect for many practical uses. This module is ideal for boost rectifier and three-phase bridge rectifier applications in particular. The maximum junction temperature is 125°C and the operating insulation voltage of this module is 2,000V DC.
The working principle of the CM35MXA-24S module is fairly straightforward. When the collector current of the IGBT module is applied, it will switch on by “ON” pulse command and the voltage in the gate will drop, opening up the junction between the n-type and p-type semiconductors. This causes the IGBT module to switch from an OFF to an ON state. To turn off the IGBT module, the “OFF” pulse command is applied and the voltage in the gate will rise, thus closing the junction and switching the module off.
The CM35MXA-24S module is applicable for a wide range of applications where medium voltage and higher speed switching are required. It is perfect for AC motor drives, high power rectifiers and converter applications. This module can also be used in battery charging and braking applications. Furthermore, the CM35MXA-24S module has very good loss characteristics, making it suitable for many different applications that require a high current, low voltage operation.
The CM35MXA-24S module is a great choice for applications that require a high current and low voltage operation. It has low loss characteristics, making it suitable for many power applications. It is designed to take up minimal space in a variety of applications, and its high temperature tolerance makes it perfect for high temperature environments. Furthermore, its simple circuitry and pulse commands make it easy to control and operate in a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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