CM50TU-24F Allicdata Electronics
Allicdata Part #:

CM50TU-24F-ND

Manufacturer Part#:

CM50TU-24F

Price: $ 102.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Powerex Inc.
Short Description: IGBT MOD 6PAC 1200V 50A F SER
More Detail: IGBT Module Trench Three Phase Inverter 1200V 50A ...
DataSheet: CM50TU-24F datasheetCM50TU-24F Datasheet/PDF
Quantity: 1000
10 +: $ 92.73110
Stock 1000Can Ship Immediately
$ 102
Specifications
Series: IGBTMOD™
Part Status: Active
IGBT Type: Trench
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 50A
Power - Max: 320W
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 20nF @ 10V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

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CM50TU-24F Application Field and Working Principle

When it comes to transistors, one of the most popular options on the market today is the CM50TU-24F. This transistor is an Insulated Gate Bipolar Transistor (IGBT) module with a low-on-state voltage and a number of other features that make it highly appealing to various types of applications. In this article, we will look into the various types of applications where this CM50TU-24F transistor is typically used, as well as its underlying working principle.

The CM50TU-24F transistor module is best suited for transportation, IT, medical, military and telecommunications applications. Its features also make it a great choice for applications related to the manufacturing industry. The power device features a wide operational temperature range, which makes it suitable for use in a variety of different environments. The device also features a low dynamic impedance and the ability to turn off quickly, making it suitable for high-frequency applications.

As mentioned previously, the CM50TU-24F works on the principle of an IGBT. It consists of a small N-type MOSFET (metal oxide semiconductor field-effect transistor) gate and a PNP bipolar junction transistor gate connected through a gate oxide layer. The transistor is basically a fast-switching power device that combines both MOSFET (Threshold Voltage) and BJT (Vbe) characteristics. It is a voltage-controlled, bidirectional power device that can control both DC and AC loads independently.

When the device is OFF, the control signal remains at 0V. This allows for a complete disconnection between the collectors and emitter, meaning no current flows through the device. When the control signal is high (above 0V), current can flow from the collector to the emitter. This is due to the effective forward voltage being impressed upon the device through the base and collector junction. As a result, a small current flows from the collector to the emitter, which can then be controlled to whatever level is required by the device.

The CM50TU-24F module is considered to be one of the most advanced IGBTs on the market. By combining the fast switching of a MOSFET with the low on-state voltage resistance of a BJT, this device offers increased efficiency and higher power ratings. Additionally, the device can be configured in various modes, such as AC chopper, DC chopper, AC/DC bridge and AC converter. Moreover, this module has a high surge current rating, which makes it suitable for load protection applications.

The CM50TU-24F is a great choice when it comes to high-power applications. With its wide range of features and reliable performance, this transistor module is suitable for a variety of applications in the transportation, IT, medical, military and telecommunications industries. It offers a number of advantages over traditional power devices, making it an ideal choice for those in the market for a reliable and robust solution.

The specific data is subject to PDF, and the above content is for reference

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