CMDZ5226B BK Allicdata Electronics
Allicdata Part #:

CMDZ5226BBK-ND

Manufacturer Part#:

CMDZ5226B BK

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Central Semiconductor Corp
Short Description: DIODE ZENER 3.3V 250MW SOD323
More Detail: Zener Diode 3.3V 250mW ±5% Surface Mount SOD-323
DataSheet: CMDZ5226B BK datasheetCMDZ5226B BK Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Voltage - Zener (Nom) (Vz): 3.3V
Tolerance: ±5%
Power - Max: 250mW
Impedance (Max) (Zzt): 28 Ohms
Current - Reverse Leakage @ Vr: 25µA @ 1V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Description

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Diodes - Zener - Single

The CMDZ5226B BK is a small signal zener diode, specifically engineered for electronic equipment that requires reverse power protection or transient voltage suppression. It is composed of a single layer of doped material, whose structure is composed of a P-type substrate and an N-type layer of silicon. They are available in different breakdown voltages, and have a maximum peak current of 400mA.

Features

  • RoHS-compliant
  • Low leakage current, low noise, and low output noise
  • High reverse standing voltage
  • High reliability
  • Great circuit stability

Applications

  • Telecommunication equipment
  • Computer peripheral interface
  • Automotive applications
  • Electronic circuit protection
  • Power supplies

Working Principle

The CMDZ5226B BK zener diode works in two distinct modes - avalanche breakdown mode and zener breakdown mode. In the avalanche breakdown mode, the avalanche effect occurs when the voltage on the junction of the P-type and N-type layers is increased. Due to the high electric field strength, free carriers are accelerated in the depletion zone and collide with the lattice of the crystal, thereby creating more charge carriers. This process leads to the increase of current, and consequently, the voltage across the diode drops. On the other hand, in the zener breakdown mode, the same process occurs, but it is caused by a different mechanism. When the voltage on the junction is high enough, the strong electric field causes the electrons to tunnel through the barrier and onto the P-type material, resulting in an increase in current.

In addition, the CMDZ5226B BK zener diode also has a reverse leakage current when the reverse voltage of the PN junction is larger than the breakdown voltage. This leakage current is caused by the minority carriers, which diffuse from the N-type layer to the P-type layer, and the ratio between the leakage current and the breakdown voltage is at a constant value. The reverse breakdown voltage can be adjusted with the use of a resistor placed in series with the diode.

The CMDZ5226B BK zener diode is widely used in electronic equipment because it offers protection against voltage spikes and reverse power protection. It is also widely used in the automotive industry, where it provides the necessary protection to the wiring harness and other components. Furthermore, its low noise, low leakage current and high reverse standing voltage make it an ideal choice for many engineering applications such as power supplies, communications and data processing.

The specific data is subject to PDF, and the above content is for reference

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