CMV2000-3E5M1PA Allicdata Electronics
Allicdata Part #:

CMV2000-3E5M1PA-ND

Manufacturer Part#:

CMV2000-3E5M1PA

Price: $ 194.61
Product Category:

Sensors, Transducers

Manufacturer: ams
Short Description: IMAGE SENSORS & COLOR SENSORS AR
More Detail: CMOS Image Sensor 2048H x 1088V 5.5µm x 5.5µm
DataSheet: CMV2000-3E5M1PA datasheetCMV2000-3E5M1PA Datasheet/PDF
Quantity: 1000
100 +: $ 176.91900
Stock 1000Can Ship Immediately
$ 194.61
Specifications
Series: --
Packaging: --
Part Status: Active
Type: CMOS
Pixel Size: 5.5µm x 5.5µm
Active Pixel Array: 2048H x 1088V
Frames per Second: 340
Voltage - Supply: 1.8V, 3.3V
Package / Case: --
Supplier Device Package: --
Operating Temperature: -30°C ~ 70°C (TA)
Description

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Image sensors are devices that capture and create digital images, which are used for digitizing events, recording sound or motion pictures, and for various other tasks. Camera systems use image sensors to capture and store visual information as digital images. One of the popular image sensors is the CMV2000-3E5M1PA image sensor. This article will discuss the application field and working principle of the CMV2000-3E5M1PA image sensor.

The CMV2000-3E5M1PA image sensor has a field of view of 2/3” and a large pixel pitch of 5.5 μm. It is designed to provide superior image quality for low-light applications, making it an optimal choice for capturing images in challenging lighting conditions. The CMV2000-3E5M1PA is particularly suitable for applications such as surveillance, security, machine vision, and night vision. The image sensor is also designed to operate at temperatures ranging from -40°C to +85°C, making it suitable for use in diverse environments.

The CMV2000-3E5M1PA image sensor has a working principle based on the photodiode, which is a device designed to convert sunlight or other light into electricity. A photodiode contains two electrodes, the n-type and the p-type, which are separated by a thin layer of insulator. When light falls on the photodiode, it causes electrons to be collected in the p-type layer and a result, a current is generated, which is proportional to the amount of light incident on the photodiode. The photodiode used in the CMV2000-3E5M1PA image sensor is integrated, which means that it is integrated into the image sensor itself.

The CMV2000-3E5M1PA image sensor also employs global reset technology, which is a way of resetting all the pixels and resetting the signal path before every frame. This ensures that the image is not affected by any noise or other unwanted artifacts. The image sensor is also equipped with column correction technology, which improves the accuracy of the image by eliminating the effects of uneven illumination and crosstalk.

The CMV2000-3E5M1PA image sensor is designed to provide superior image quality in challenging lighting conditions, making it an optimal choice for applications such as surveillance, security, machine vision, and night vision. It has a working principle based on the photodiode, and it is also equipped with global reset and column correction technologies, which ensure that the image is clear and unblemished. The CMV2000-3E5M1PA image sensor is also designed to operate well in temperatures as low as -40°C, making it suitable for a variety of conditions.

The specific data is subject to PDF, and the above content is for reference

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