Allicdata Part #: | CR8CM-12B#BH0-ND |
Manufacturer Part#: |
CR8CM-12B#BH0 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America |
Short Description: | THYRISTOR 600V 8A TO220 |
More Detail: | SCR 600V 12.6A Standard Recovery Through Hole TO-2... |
DataSheet: | CR8CM-12B#BH0 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Active |
Voltage - Off State: | 600V |
Voltage - Gate Trigger (Vgt) (Max): | 1V |
Current - Gate Trigger (Igt) (Max): | 15mA |
Voltage - On State (Vtm) (Max): | 1.4V |
Current - On State (It (AV)) (Max): | 8A |
Current - On State (It (RMS)) (Max): | 12.6A |
Current - Hold (Ih) (Max): | 15mA |
Current - Off State (Max): | 2mA |
Current - Non Rep. Surge 50, 60Hz (Itsm): | 120A @ 50Hz |
SCR Type: | Standard Recovery |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220ABA |
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Thyristors - SCRs
CR8CM-12B#BH0 can be classified as a type of thyristor, or a silicon-controlled rectifier (SCR). These devices are considered semiconductor devices utilizing the N-type and P-type material to create an effective current and voltage control mechanism. With the rise of various applications that require this type of device, it is important to understand the application field and working principle of a CR8CM-12B#BH0.
Application Field
Thyristors, such as the CR8CM-12B#BH0, are applicable in various industries, e.g., transformer, reactor and alternator control, industrial heating and power supply design, power system protection, and remote-control systems. This type of device is often used in the control of alternating current and is the core part of power electronics. Most of the time, SCRs are used as they can handle higher currents, longer duration and higher voltage than the regular diode.
Working Principle
The basic construction of an SCR is basically four layers of semiconductor material connected by three p-n junctions. The rest of the construction is a basic cross-over network of connections between an anode and a cathode. The material is then placed between the anode and the gate.
When a positive voltage from the gate is applied to the material between the anode and the gate, it causes a breakdown of the junction between the anode and the gate. This allows for current to flow from the anode to the gate then onto the cathode. This breakdown occurs because of the depletion zones that are created. This creates a current path for the electrons to flow and allows for a current to flow from the anode to the cathode.
Once a current is flowing from the anode to the cathode, it is not necessary to keep the positive voltage at the gate to keep this current flowing. This current will only be interrupted when a reverse voltage is applied, or the current exceeds a specific level.
Conclusion
The CR8CM-12B#BH0 is a type of thyristor, or a silicon-controlled rectifier (SCR), which can be used in various applications such as transformer, reactor and alternator control, industrial heating and power system protection. Its working principle is based on the principle of four layers of semiconductor material connected by three p-n junctions and a basic cross-over network of connections between an anode and a cathode. Once a positive voltage is applied to the gate, it causes a breakdown of the junction and allows for current to flow from the anode to the cathode, even when a reverse voltage is applied.
The specific data is subject to PDF, and the above content is for reference
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