| Allicdata Part #: | 835-1101-ND |
| Manufacturer Part#: |
CS241210 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Powerex Inc. |
| Short Description: | DIODE GP 1.2KV 100A POWRBLOK |
| More Detail: | Diode Standard 1200V 100A (DC) Chassis Mount POW-R... |
| DataSheet: | CS241210 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Obsolete |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 1200V |
| Current - Average Rectified (Io): | 100A (DC) |
| Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 100A |
| Speed: | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr): | 800ns |
| Current - Reverse Leakage @ Vr: | 20mA @ 1200V |
| Capacitance @ Vr, F: | -- |
| Mounting Type: | Chassis Mount |
| Package / Case: | POW-R-BLOK™ Module |
| Supplier Device Package: | POW-R-BLOK™ Module |
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Diodes - Rectifiers - Single
A CS241210 is a single diode-rectifier, generally referred to as a Schottky diode, with a peak inverse voltage (PIV) rating of 1500 V. Schottky diodes are commonly used in a variety of power conversion and distribution applications, such as power factor correction, battery charging and monitoring, EMI filtering, voltage clamping, and alternating current-to-direct current bridge rectification.
The CS241210 is designed to provide high performance and reliability in electronic circuits. It has an avgeree breakdown voltage of 600 V, and avalanche energy rating of 0.2mJ. The device also features low forward voltage drop, low reverse leakage current and fast recovery time.
The working principle of a Schottky diode is based on the rectifying effect of a semiconductor. When the device is connected in a circuit, electrons can only flow in one direction, allowing for the conversion of AC to DC power. A Schottky diode is a special type of diode that is composed of metal and semiconductor materials, and consists of two junctions between the metal and the semiconductor material.
When a forward bias voltage is applied to the device, the metal junction allows carriers to cross the metal-semiconductor barrier to create a current. When a reverse bias voltage is applied, the carriers must cross the reverse Schottky barrier to generate a current. The Schottky diode has a higher barrier potential than a regular diode, which allows for a higher breakdown voltage and faster switching time.
The CS241210 diode is also designed for high-temperature operation with a junction temperature range from - 55 to + 175 degrees Celsius. In addition, the device is also environmentally friendly and meets RoHS standards. The device is designed to provide highly reliable performance in applications such as rectifiers, power factor correction circuits, and other power conversion and distribution applications.
The CS241210 diode is an excellent choice for a variety of power applications. This device offers high performance, low forward voltage drop, fast recovery time, and low reverse leakage current. The device is also designed for high temperature operation and is environmentally friendly, making it a great choice for any power conversion and distribution application.
The specific data is subject to PDF, and the above content is for reference
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| TXR54AB90-2012AI2-CS2477 | TE Connectiv... | 62.09 $ | 1000 | CONN BACKSHELL ADPT SZ20 ... |
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| TX54AB00-2216-CS2473 | TE Connectiv... | 25.73 $ | 1000 | CONN BACKSHELL ADPT SZ 22... |
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CS241210 Datasheet/PDF