CSD3120H

SCR (Silicon Controlled Rectifier) is a complete electronic component. It is a three-terminal, four-layer semiconductor device and a type of thyristor with a unidirectional feature and is used to control power. The CSD3120H module is a trigger optimized and self-driven, closed-loop Thyristor module with three pins, built on and integrated with an insulated high power gate oxide. This gate oxide is capable of withstanding high voltage and temperature. The CSD3120H module is used in various application fields such as industrial and commercial power control, AC motor control, high power switching, uninterruptible power supply (UPS) systems, and for other potential applications. The main advantage of using a CSD3120H module is that it provides optimized performance and power saving, thus reducing the cost and complexity of the system. The CSD3120H is designed for minimum forward and reverse voltage drop, allowing for higher current carrying capacities and improved efficiency for power-saving applications.

The CSD3120H’s working principle is based on the concept of a self-driven gate oxide. This gate oxide is an integrated component of the device, allowing for improved switching behavior and performance. This oxynitride-based gate oxide features a rapid breakdown voltage, good thermal stability, optimized switching energy, low forward voltage drop, and high reverse voltage blocking capability. This self-driving gate oxide is protected in a sealed housing with a Phase Control Module, which includes peripheral circuitry such as SCR protection and fault reporting. The CSD3120H’s triggering mechanism is triggered by the SCR, which functions as a switch and activates the CSD3120H module. As soon as the SCR is triggered, it activates the gate control circuitry, resulting in a trigger signal sent from the SCR to the CSD3120H module. The CSD3120H module then triggers the Thyristor and starts current flow. The Thyristor then activates and stops the current flow accordingly. The CSD3120H has a nominal current-handling capacity of 120A, with a wide operating temperature range of -25 to + 125 degrees Celsius. It is also capable of handling up to 400 V per leg. The CSD3120H module is optimized for performance, power savings, and cost efficiency while providing substantial thermal stability and reduced energy consumption.

In conclusion, CSD3120H modules are widely used in many application fields. It has an optimized self-driving gate oxide, a nominal current-handling capacity of 120A and a wide operating temperature range of -25 to + 125 degrees Celsius. The device has a fast triggering mechanism and is capable of providing high reverse voltage blocking capability for power savings.