CWR26HK226MCGB\HR

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Tantalum capacitors are widely used in high density electronic equipment and hybrid integrated circuits. The CWR26HK226MCGB\HR is a common type of tantalum capacitor and it is highly valued in applications such as signal filtering, buffering, and power factor correction.

The CWR26HK226MCGB\HR is a high frequency and high reliability high capacitance capacitor with a voltage rating of 16V. It is designed to have low equivalent series resistance (ESR) and low inductance so that it can meet the needs of high-speed digital signal processing. It also has a high stability element and is highly resistant to shock and vibration. This capacitor can operate up to -55~+125°C and it has a shelf life of 4000 hours at 85°C and 2 years at 25°C.

The construction of the CWR26HK226MCGB\HR is that of a two-terminal capacitor with a tungsten anode and a tantalum pellet cathode. Here, a plasma electrolytic oxidation (PEO) technique is used to form a capacitive layer on the surface of the tungsten anode. This layer acts as a dielectric and creates a capacitor structure. The thin film of oxidized tantalum is what gives the capacitor the high capacitance value.

The working principle of the CWR26HK226MCGB\HR is based on the capacitance of the capacitor. The capacitor forms an electric field between the two terminals which stores electrical energy. This energy is used when a voltage is applied across the terminals. The current entering the capacitor is reduced by the capacitive reactance and the voltage across it becomes equal to the sum of the capacitor’s capacitance and the current entering the capacitor.

In summary, the CWR26HK226MCGB\HR is a type of tantalum capacitor designed for high frequency and high reliability applications. It has a high capacitance value and a low ESR and inductance making it suitable for high-speed signal processing. The two-terminal capacitor stores electric energy which is then used when a voltage is applied across its terminals.

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