
Allicdata Part #: | D-602-0141CS339-ND |
Manufacturer Part#: |
D-602-0141CS339 |
Price: | $ 19.25 |
Product Category: | Uncategorized |
Manufacturer: | TE Connectivity Aerospace, Defense and Marine |
Short Description: | D-602-0141CS339 |
More Detail: | N/A |
DataSheet: | ![]() |
Quantity: | 1000 |
50 +: | $ 17.49200 |
Series: | * |
Part Status: | Active |
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The D-602-0141CS339 is a self-contained, digitally controlled, diffused oxide thin-film electron deposition system designed specifically for industrial and research applications. It provides precise, continuous, highly accurate, and repeatable thin film deposition capabilities in a compact, low-maintenance package.
The system is built around the basic principle of thermally enhanced diffusion and utilizes a wide range of diffusion techniques to deposit oxide thin films. The oxidation process is generically referred to as Chemical Vapor Deposition (CVD). The process entails passing a gas or vapor containing the desired film element through a heated chamber. The element is then chemically combined or reacted with another gas in the chamber to produce the desired oxide film.
The D-602-0141CS339 is used in a variety of industries, such as semiconductor fabrication, surface mounting technology, and precision metallurgy. In each of these industries, the D-602-0141CS339 is used to provide precise, uniform, and repeatable thin-film deposition capabilities. In the semiconductor fabrication and surface mounting technology fields, the system is used to deposit oxide films and barrier layers for silicone components. In the precision metallurgy fields, the thin-film deposition capabilities of the D-602-0141CS339 are used to deposit metal coatings on components in order to provide superior electrical and thermal properties.
The primary benefits of using a D-602-0141CS339 thin-film deposition system include greater accuracy and repeatability, higher oxidation rates, improved uniformity, and increased throughput. The system allows for precise control of film parameters, allowing for optimization of surface properties and intermetallic layers. Furthermore, the D-602-0141CS339 allows for low-temperature, low-pressure, and low-input oxide deposition. This enables the production of thin-film silicon structures using a lower temperature than traditional methods. Due to its small size, the system is highly efficient and easier to install than other similar systems.
The D-602-0141CS339 system works by passing a gas or vapor containing the desired film element through a heated chamber. The element is then chemically combined or reacted in the chamber to form the desired oxide film. The system includes a digital control module that enables the user to enter the desired temperature and duration of the oxidation steps. The control module can also be used to monitor the process and provide feedback on the rate of oxidation and uniformity of the film.
In conclusion, the D-602-0141CS339 system is a powerful and accurate thin-film deposition system that is used in a wide variety of industries. By providing precise, repeatable thin-film deposition capabilities, the system allows for improved surface properties and intermetallic layers as well as greater accuracy and uniformity. Furthermore, the system is highly efficient and allows for low-temperature, low-pressure, and low-input oxide deposition. All in all, the D-602-0141CS339 is a highly advanced system that is well-suited for a variety of industrial and research applications.
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